Reliability and Stability Issues for Lanthanum Silicate as a High-K Dielectric

Reliability and Stability Issues for Lanthanum Silicate as a High-K Dielectric

著者名:

掲載資料名:

Physics and technology of high-k gate dielectrics 4

シリーズ名:

ECS transactions

シリーズ巻号:

3(3)

発行年:

2006

開始ページ:

245

終了ページ:

252

総ページ数:

8

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775038 [1566775035]

言語:

英語

請求記号:

E23400/3-3

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047111
シリーズID:	PA00000034
会議名:	International Symposium on High Dielectric Constant Gate Stacks ; Meeting of the Electrochemical Society
回次:	4th ; 210th
会議開催地:	Cancun, Mexico
会議開催年:	2006.10.30-2006.11.03

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2 国際会議録 High-Temperature Processing Effects on Lanthanum Silicate Gate Dielectric MIS Devices D. J. Lichtenwalner, J. Jur, N. Inoue, A. Kingon Electrochemical Society	8 国際会議録 Integration Issues with High k Gate Stacks* Osburn, C.M., Han, S.K., Kim, I., Campbell, S.A., Garfunkel, E., Gustafson, T., Hauser, J., King, T.-J., Liu, Q., … Electrochemical Society
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