Physics of Metal/High-k Interfaces | 東京工業大学附属図書館文献データベース

Blank Cover Image

Physics of Metal/High-k Interfaces

著者名:

さらに 10 件

掲載資料名:

Physics and technology of high-k gate dielectrics 4

シリーズ名:

ECS transactions

シリーズ巻号:

3(3)

発行年:

2006

開始ページ:

129

終了ページ:

142

総ページ数:

14

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775038 [1566775035]

言語:

英語

請求記号:

E23400/3-3

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047111
シリーズID:	PA00000034
会議名:	International Symposium on High Dielectric Constant Gate Stacks ; Meeting of the Electrochemical Society
回次:	4th ; 210th
会議開催地:	Cancun, Mexico
会議開催年:	2006.10.30-2006.11.03

類似資料:

1 国際会議録 New Theory of Effective Workfunctions at Metal/High-k Dielectric Interfaces - Application to Metal/High-k HfO₂ and La₂O₃ Dielectric Interfaces K. Shiraishi, T. Nakayatna, Y. Akasaka, S. Miyazaki, T. Nakaoka, K. Ohmori, P. Abmet, K. Torii, H. Watanabe, T. Chikyow, … Electrochemical Society	7 国際会議録 Theory of Metal/Dielectric Interfaces -Breakdown of Schottky Barrier Limits- K. Shiraishi, T. Nakayama, T. Nakaoka, A. Ohta, S. Miyazaki Electrochemical Society
2 国際会議録 Theoretical Studies on the Physical Properties of Poly-Si and Metal Gates/HfO₂ Related High-k Dielectrics Interfaces K. Shiraishi, K. Torii, Y. Akasaka, T. Nakayama, T. Nakaoka, S. Miyazaki, T. Chikyow, K. Yamada, Y. Nara Electrochemical Society	8 国際会議録 Photoemission Study of Metal/HfSiON Gate Stack S. Miyazaki, H. Yoshinaga, A. Ohta, Y. Akasaka, K. Shiraishi Electrochemical Society
3 国際会議録 Theoretical Studies on Metal/High-k Gate Stacks K. Shiraishi, Y. Akasaka, G. Nakamura, T. Nakayama, S. Miyazaki, H. Watanabe, A. Ohta, K. Ohmori, T. Chikyow, Y. Nara, … Electrochemical Society	9 国際会議録 Role of the Ionicity in Defect Formation in Hf-Based Dielectrics N. Umezawa, K. Shiraishi, S. Miyazaki, A. Uedono, Y. Akasaka Electrochemical Society
4 国際会議録 THEORETICAL INVESTIGATION OF THE INTERFACES BETWEEN HF-BASED HIGH-K DIELECTRICS AND POLY-SI AND METAL GATES SHIRAISHI, K. 1,2,, NAKAYAMA, T. 3, AKASAKA, Y. 4, MlIYAZAKI, S. 5,2,, NAKAOKA, T. 1, OHMORI, K. 2, AHMET, P. 2, TORII, … Electrochemical Society	10 国際会議録 Combinatorial Fabrication and Characterization of Oxide and Metal Thin Film Composition Spreads P. Ahmet, T. Nagata, D. Kukuruznyak, K. Ohmori, K. Kakushima, K. Tsutsui, T. Chikyow, H. Iwai Electrochemical Society
5 国際会議録 Extensive Studies for Effects of Nitrogen Incorporation into Hf-Based High-k Gate Dielectrics N. Umezawa, K. Shiraishi, H. Watanabe, K. Toni, Y. Akasaka, S. Inumiya, M. Boero, A. Uedono, S. Miyazaki, T. Ohno, T. … Electrochemical Society	11 国際会議録 Relation between Solubility of Silicon in High-k Oxides and the Effect of Fermi Level Pinning N. Umezawa, K. Shiraishi, K. Kakushima, H. Iwai, K. Ohmori Electrochemical Society
6 国際会議録 Wide Controllability of Flatband Voltage in La₂O₃ Gate Stack Structures-Remarkable Advantages of La₂O₃ over HfO₂ K. Ohmori, P. Ahmet, K. Shiraishi, K. Yamabe, H. Watanabe, Y. Akasaka, N. Umezawa, K. Nakajima, M. Yoshitake, T. … Electrochemical Society	12 国際会議録 Control of Crystalline Microstructures in Metal Gate Electrodes for Nano CMOS Devices K. Ohmori, T. Chikyow, T. Hosoi, H. Watanabe, K. Nakajima Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12