Electrically Active Interface Defects in the (100)Si/SiOx/HfO₂/TiN System: Origin,Instabilities and Passivation

Electrically Active Interface Defects in the (100)Si/SiOx/HfO₂/TiN System: Origin,Instabilities and Passivation

著者名:

掲載資料名:

Physics and technology of high-k gate dielectrics 4

シリーズ名:

ECS transactions

シリーズ巻号:

3(3)

発行年:

2006

開始ページ:

97

終了ページ:

110

総ページ数:

14

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775038 [1566775035]

言語:

英語

請求記号:

E23400/3-3

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047111
シリーズID:	PA00000034
会議名:	International Symposium on High Dielectric Constant Gate Stacks ; Meeting of the Electrochemical Society
回次:	4th ; 210th
会議開催地:	Cancun, Mexico
会議開催年:	2006.10.30-2006.11.03

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