Point-Defect Generation in Ni-, Pd-, and Pt-Germanided Schottky Bafflers on N-Type Germanium Substrates
- 著者名:
E. R. Simoen K. Opsomer C. L. Claeys K. Maex C. Detavernier R. Van Meirhaeghe S. Forment P. Clauws - 掲載資料名:
- Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment
- シリーズ名:
- ECS transactions
- シリーズ巻号:
- 3(2)
- 発行年:
- 2006
- 開始ページ:
- 391
- 終了ページ:
- 402
- 総ページ数:
- 12
- 出版情報:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 19385862
- ISBN:
- 9781566775021 [1566775027]
- 言語:
- 英語
- 請求記号:
- E23400/3-2
- 資料種別:
- 国際会議録
類似資料:
MRS - Materials Research Society |
Electrochemical Society |
Electrochemical Society |
Materials Research Society |
Materials Research Society |
Electrochemical Society |
Materials Research Society |
MRS - Materials Research Society |
Materials Research Society |
Electrochemical Society |
Materials Research Society |
Electrochemical Society |