Investigating Electronic and Chemical Properties of Ge/GeOxNy/HfO2 Gate Stacks: High-Resolution Photoelectron Spectroscopy Using Synchrotron Radiation

Investigating Electronic and Chemical Properties of Ge/GeOxNy/HfO2 Gate Stacks: High-Resolution Photoelectron Spectroscopy Using Synchrotron Radiation

著者名:

O. J. Renault

掲載資料名:

Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment

シリーズ名:

ECS transactions

シリーズ巻号:

3(2)

発行年:

2006

開始ページ:

385

終了ページ:

390

総ページ数:

6

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775021 [1566775027]

言語:

英語

請求記号:

E23400/3-2

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047110
シリーズID:	PA00000034
会議名:	International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS ; Meeting of the Electrochemical Society
回次:	2nd ; 210th
会議開催地:	Cancun, Mexico
会議開催年:	2006.10.30-2006.11.02

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