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Low Pressure Chemical Vapor Deposition of Tantalum-Based Material

著者名:
掲載資料名:
Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment
シリーズ名:
ECS transactions
シリーズ巻号:
3(2)
発行年:
2006
開始ページ:
289
終了ページ:
296
総ページ数:
8
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
19385862
ISBN:
9781566775021 [1566775027]
言語:
英語
請求記号:
E23400/3-2
資料種別:
国際会議録

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