NBTI Study on PMOS Devices with TiN/HfO2 Gate Stack and Process Induced Strain

NBTI Study on PMOS Devices with TiN/HfO2 Gate Stack and Process Induced Strain

著者名:

A. K. Shickova

掲載資料名:

Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment

シリーズ名:

ECS transactions

シリーズ巻号:

3(2)

発行年:

2006

開始ページ:

253

終了ページ:

262

総ページ数:

10

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775021 [1566775027]

言語:

英語

請求記号:

E23400/3-2

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047110
シリーズID:	PA00000034
会議名:	International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS ; Meeting of the Electrochemical Society
回次:	2nd ; 210th
会議開催地:	Cancun, Mexico
会議開催年:	2006.10.30-2006.11.02

類似資料:

1 国際会議録 Interface Trap Characterization and Fermi Level Pinning in Si-Passivated Ge/HfO₂ Capacitors K. Martens, B. Kaczer, P. Roussel, G. Groeseneken, H. Maes Electrochemical Society	7 国際会議録 P+/N Junction Formation in Thin Strain Relaxed Buffer Strained Silicon Substrates: The Effect of the Junction Anneal Eneman, G., Simoen, E., Delhougne, R., Verheyen, P., Simons, V., Loo, R., Caymax, M., De Meyer, K., Vandervorst, W., … Electrochemical Society
2 国際会議録 The Combination of Embedded Si_1-xGe_x S/D and Metal Gate Options for High Performance pMOS Transistors P. Verheyen, S. Severi, G. Eneman, R. Loo, D. Shamiryan Electrochemical Society	8 国際会議録 Towards 0.5 nm EOT Scaling of HfO2/Metal Electrode Gate Stacks Peterson, J. J., Brown, G. A., Matthews, K., Gutt, J., Gopalan, S., Li, H. -J., Kirsch, P., Barnett, J., Moumen, N., … Electrochemical Society
3 国際会議録 (3.5) 5:00 - 5:20 PM - Mobility Enhancement in Compressively Strained SiGe Surface Channel pMOS(FET) with HfO2/TiN Gate Stack Jin, B., Datta, S., Dewey, G., Doczy, M., Doyle, B.S., Johnson, K., Kavalieros, J., Metz, M., Zelick, N., Chau, … Electrochemical Society	9 国際会議録 High Quality Ultra Thin HfO 2 Gate Stack Prepared by In-Situ RT-MOCVD Process Lee, S.J., Luan, H.F., Bai, W.P., Lee, C.H., Clark, B., Rabents, D., Myers, L., Kwang, D.L. Electrochemical Society
4 国際会議録 INVITED: ELECTRIC STRESS-INDUCED DEGRADATION OF THIN OXIDE LAYERS AND ITS IMPACT ON DEVICE RELIABILITY Degraeve, R., Kaczer, B., Roussel, Ph., Groeseneken, G. Electrochemical Society	10 国際会議録 Diode Analysis of Electrically Active Defects in Recessed SiGe Source/Drain Diodes E.R. Simoen, M.B. Gonzalez, G. Eneman, P. Verheyen, C.L. Claeys Electrochemical Society
5 国際会議録 INVITED: ELECTRIC STRESS-INDUCED DEGRADATION OF THIN OXIDE LAYERS AND ITS IMPACT ON DEVICE RELIABILITY Degraeve, R., Kaczer, B., Roussel, Ph., Groeseneken, G. Electrochemical Society	11 国際会議録 Defect Engineering Considerations for Strained Silicon Substrates C. Claeys, G. Eneman, M. Scholz, R. Loo, P. Verheyen, K. De Meyer, E. R. Simoen Electrochemical Society
6 国際会議録 Analysis of Short-channel MOSFET Behavior after Gate Oxide Breakdown and its Impact on Digital Circuit Reliability Groeseneken, G., Kaczer, B., Degraeve, R. Electrochemical Society	12 国際会議録 N+/P and P+/N Junctions in Strained Si on Thin Strain Relaxed SiGe Buffers: the Effect of Defect Density and Layer Structure Eneman, G., Simoen, E., Delhougne, R., Verheyen, P., Ries, M., Loo, R., Caymax, M., Vandervorst, W., De Meyer, K. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12