CVD Delta-Doped Boron Surface Layers for Ultra-Shallow Junction Formation

CVD Delta-Doped Boron Surface Layers for Ultra-Shallow Junction Formation

著者名:

掲載資料名:

Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment

シリーズ名:

ECS transactions

シリーズ巻号:

3(2)

発行年:

2006

開始ページ:

35

終了ページ:

44

総ページ数:

10

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775021 [1566775027]

言語:

英語

請求記号:

E23400/3-2

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047110
シリーズID:	PA00000034
会議名:	International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS ; Meeting of the Electrochemical Society
回次:	2nd ; 210th
会議開催地:	Cancun, Mexico
会議開催年:	2006.10.30-2006.11.02

類似資料:

1 国際会議録 Versatile N-Type Profile Engineering by Controlling Arsenic Surface Segregation in Silicon RPCVD Milos Popadic, Francesco Sarubbi, Tom L. M. Scholtes, Lis K. Nanver Electrochemical Society	7 国際会議録 Ultra-Shallow Junction Formation by Laser-Induced Atomic Layer Doping* Koyanagi, Mitsumasa Electrochemical Society
2 国際会議録 Laser Annealing for Ultra-Shallow Junction Formation in Advanced CMOS Surdeanu, R., Ponomarev, Y.V., Cerutti, R., Pawlak, B.J., Nanver, L.K., Hoflijk, I., Stolk, P.A., Dachs, C.J.J., … Electrochemical Society	8 国際会議録 Ultra-Shallow Junction Formation Via Thermal diffusion of Boron into High Energy Ion Irradiated Silicon Shao, L., Lu, X.M., Wang, X.M., Liu, J.R., Chu, W.K. Electrochemical Society
3 国際会議録 Sub-nm Screening Layer Approach for Ultra-Shallow Junction Formation Hori, M., Miyake, T., Hikazutani, K., Kataoka, Y., Nakamura, M., Wada, T., Kase, M. MRS - Materials Research Society	9 国際会議録 RF and Microwave Annealing for Ultra Shallow Junction Formation Thompson, K., Booske, J.H., Downey, D.F., Gianchandani, Y., Cooper, R. Electrochemical Society
4 国際会議録 Electrical Characterization of Residual Implantation-Induced Defects in the Vicinity of Laser-Annealed Implanted Ultrashallow Junctions V. Gonda, S. Liu, T.L.M. Scholtes, L.K. Nanver Materials Research Society	10 国際会議録 FORMATION OF ULTRA-SHALLOW JUNCTIONS BY PLASMA DOPING TSUTSUl, KAZUO 1, SASAKI, YUICHIRO 2, JlN, CHENG-GUO 2, TAMURA, HlDEKI 2, OKASHITA, KATSUM 2, ITO, HlROYUKI 2, MlZUNO, … Electrochemical Society
5 国際会議録 Application of Excimer Laser Annealing in the Formation of Implanted Shallow Junctions Nanver, L.K., Goudena, E.J.G., Ren, Q.W., von de Berg, M., Mallee, R., Slabbekoorn, J. Electrochemical Society	11 国際会議録 Ultra-Shallow Raised p+n Junctions with Self-Aligned Titanium Silicide Contacts Formed by Boron Outdiffusion from Selectively Deposited Silicon Epitaxial Layers Shih, H. T., Violette, K. E., Ozturk, M. C. MRS - Materials Research Society
6 国際会議録 Formation of SiC Delta-Doped-Layer Structures by CVD Takahashi, K., Uchida, M., Kusumoto, O., Yamashita, K., Miyanaga, R., Kitabatake, M. Trans Tech Publications	12 国際会議録 The Role of Preamorphization and Activation for Ultra Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer Pawlak, B.J., Vandervorst, W., Lindsay, R., Wolf, I.De, Roozeboom, F., Delhougne, R., Benedetti, A., Loo, R., Caymax, … Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12