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1/f Noise as a Tool to Assess Fermi Level Pinning (EF) at the HfO₂/poly-Si Interface in High-k n-MOSFETs

著者名:
掲載資料名:
Silicon materials science and technology X
シリーズ名:
ECS transactions
シリーズ巻号:
2(2)
発行年:
2006
開始ページ:
503
終了ページ:
514
総ページ数:
12
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566774390 [156677439X]
言語:
英語
請求記号:
E23400/2-2
資料種別:
国際会議録

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