Advanced Gate Stacks with Fully Silicided Gates and High-k Dielectrics for Low Power CMOS | 東京工業大学附属図書館文献データベース

Blank Cover Image

Advanced Gate Stacks with Fully Silicided Gates and High-k Dielectrics for Low Power CMOS

著者名:

さらに 7 件

掲載資料名:

Dielectrics for nanosystems II: materials science, processing, reliability, and manufacturing

シリーズ名:

ECS transactions

シリーズ巻号:

2(1)

発行年:

2006

開始ページ:

301

終了ページ:

310

総ページ数:

10

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566774383 [1566774381]

言語:

英語

請求記号:

E23400/2-1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047106
シリーズID:	PA00000034
会議名:	International Symposium on Dielectrics for Nanosystems ; Meeting of the Electrochemical Society
回次:	2nd ; 209th
会議開催地:	Denver, Colorado. USA
会議開催年:	2004.05.07-2004.05.12

類似資料:

1 国際会議録 Low Power and High Speed Hf-based Gated CMOS FET with Dual Poly-Si Gate Electrodes (Invited paper) Iwamoto, T., Ogura, T., Terai, M., Morioka, A., Saitoh, M., Kimizuka, N., Yasuda, Y., Imai, K., Fujieda, S., Watanabe, … Electrochemical Society	7 国際会議録 Interface Engineering by PVD-Based In-Situ Fabrication Method for Advanced Metal/High-k Gate Stacks H. Watanabe, S. Horie, H. Arimura, N. Kitano, T. Minami, M. Kosuda, T. Shimura, K. Yasutake Electrochemical Society
2 国際会議録 Bias Temperature Instability Characterization of Advanced Gate Stacks S. Fujieda, M. Terai, M. Saitoh, A. Toda, Y. Miura, Z. Liu, Y. Teracka, A. Yoshigoe, M. Wilde, K. Fukutani Electrochemical Society	8 国際会議録 HfSiON Gate Dielectrics for Low-Stand-By Power CMOS Devices Sekine, K., Inumiya, S., Kaneko, A., Sato, M., Hirano, I., Yamaguchi, T., Eguchi, K., Tsunashima, Y. Electrochemical Society
3 国際会議録 HIGH PERFORMANCE NMOSFET WITH HFSIX/HFO2 GATE STACK BY LOW TEMPERATURE PROCESS TAI, K., HIRANO, T., ANDO, T., YAMAGUCHI, S., KATO, T., HIYAMA, S., HAGIMOTO, Y., YAMAGISHI, N., WATANABE, K., YAMAMOTO, … Electrochemical Society	9 国際会議録 What is the Essence of VFB Shifts in High-κ Gate Stack? T. Nabatame, K. Iwamoto, K. Akiyama, Y. Nunoshige, H. Ota Electrochemical Society
4 国際会議録 27 Materials Issues of Ni Fully Silicided (FUSI) Gates for CMOS Applications Kittl, J. A., Lauwers, A., Pawlak, M. A., Demeurisse, C., Anil, K. G., Veloso, A., van Dal, M. J. H., Schram, T., Brijs, … Electrochemical Society	10 国際会議録 Analysis of Electronic Structure of High-K Films using STEM-EELS N. Ikarashi, K. Manabe, K. Takahashi, M. Saitoh Electrochemical Society
5 国際会議録 Control of Material Interactions in Advanced High-k Metal Gate Stacks C. Wajda, G. Leusink, K. Akiyama, S. Ashigaki, S. Aoyama, K. Shimomura, M. Aruga, T. Takahashi, K. Yamazaki, H. Yamasaki Electrochemical Society	11 国際会議録 28 Self-aligned PtSi Fully Silicided (FUST) Metal Gates for 45 nm CMOS Applications van Dal, M.J.H., Lauwers, A., Cunniffe, J., Verbeeck, R., Vrancken, C., Demeurisse, C., Dao, T., Tamminga, Y., Veloso, … Electrochemical Society
6 国際会議録 Thermal Robustness of VFB and EOT in HfOx(N) p-MOS Devices with Partially Silicided Pt Gate Electrodes M. Kadoshima, T. Nabatame, M. Takahashi, A. Ogawa, K. Iwamoto, W. Mizubasyashi, H. Ota, H. Satake, A. Toriumi Electrochemical Society	12 国際会議録 Ni, Pt and Yb Based Fully Silicided (FUSI) Gates for Scaled CMOS Technologies J. A. Kitti, A. Lauwers, M. van Dal, H. Yu, A. Veloso, T. Hoffinann, M. Pawlak, C. Demeurisse, S. Kubicek, M. Niwa, C. … Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12