Study of the Drain Leakage Current Behavior in Circular Gate SOI nMOSFET Using 0.13μm SOI CMOS Technology at High Temperatures

Study of the Drain Leakage Current Behavior in Circular Gate SOI nMOSFET Using 0.13μm SOI CMOS Technology at High Temperatures

著者名:

掲載資料名:

Microelectronics Technology and Devices : SBMICRO 2007

シリーズ名:

ECS transactions

シリーズ巻号:

9(1)

発行年:

2007

開始ページ:

397

終了ページ:

404

総ページ数:

8

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775656 [1566775655]

言語:

英語

請求記号:

E23400/9-1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047130
シリーズID:	PA00000034
会議名:	International Symposium on Microelectronics Technology and Devices : SBMicro
回次:	22nd : 2007
会議開催地:	Rio deJaneiro, Brazil
会議開催年:	2007.09.03-2007.09.06

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