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Improved Model to Determine the Generation Lifetime in Double Gate SOI nMOSFETs

著者名:
掲載資料名:
Microelectronics Technology and Devices : SBMICRO 2007
シリーズ名:
ECS transactions
シリーズ巻号:
9(1)
発行年:
2007
開始ページ:
343
終了ページ:
352
総ページ数:
10
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566775656 [1566775655]
言語:
英語
請求記号:
E23400/9-1
資料種別:
国際会議録

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