Recent Progress of SiGe Heterostructure Technologies for Novel Devices
- 著者名:
- 掲載資料名:
- Dielectrics for nanosystems II: materials science, processing, reliability, and manufacturing
- シリーズ名:
- ECS transactions
- シリーズ巻号:
- 2(1)
- 発行年:
- 2006
- 開始ページ:
- 165
- 終了ページ:
- 180
- 総ページ数:
- 16
- 出版情報:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 19385862
- ISBN:
- 9781566774383 [1566774381]
- 言語:
- 英語
- 請求記号:
- E23400/2-1
- 資料種別:
- 国際会議録
類似資料:
1
国際会議録
Low Temperature Crystallization of a-SiGe on Insulating Films for Thin Film Transistor Application
Electrochemical Society |
Trans Tech Publications |
Society of Photo-optical Instrumentation Engineers |
Electrochemical Society |
Materials Research Society |
9
国際会議録
Strain Modulation of β-FeSi2 by Ge-Segregation in Solid-Phase Growth of [a-Si/a-FeSiGe]n Multi-Layer
Materials Research Society |
Electrochemical Society |
Materials Research Society |
5
国際会議録
Formation of polycrystalline-silicon-germanium films by pulsed laser-induced rapid annealing
SPIE - The International Society of Optical Engineering |
11
国際会議録
500゜C Formation of Poly-Si1-xGex (x≧0.5) on SiO2 by Ion-Beam Stimulated Solid Phase Crystallization
Materials Research Society |
Electrochemical Society |
Materials Research Society |