New Theory of Effective Workfunctions at Metal/High-k Dielectric Interfaces - Application to Metal/High-k HfO₂ and La₂O₃ Dielectric Interfaces | 東京工業大学附属図書館文献データベース

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New Theory of Effective Workfunctions at Metal/High-k Dielectric Interfaces - Application to Metal/High-k HfO₂ and La₂O₃ Dielectric Interfaces

著者名:

さらに 8 件

掲載資料名:

Dielectrics for nanosystems II: materials science, processing, reliability, and manufacturing

シリーズ名:

ECS transactions

シリーズ巻号:

2(1)

発行年:

2006

開始ページ:

25

終了ページ:

40

総ページ数:

16

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566774383 [1566774381]

言語:

英語

請求記号:

E23400/2-1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047106
シリーズID:	PA00000034
会議名:	International Symposium on Dielectrics for Nanosystems ; Meeting of the Electrochemical Society
回次:	2nd ; 209th
会議開催地:	Denver, Colorado. USA
会議開催年:	2004.05.07-2004.05.12

類似資料:

1 国際会議録 Theoretical Studies on the Physical Properties of Poly-Si and Metal Gates/HfO₂ Related High-k Dielectrics Interfaces K. Shiraishi, K. Torii, Y. Akasaka, T. Nakayama, T. Nakaoka, S. Miyazaki, T. Chikyow, K. Yamada, Y. Nara Electrochemical Society	7 国際会議録 Theory of Metal/Dielectric Interfaces -Breakdown of Schottky Barrier Limits- K. Shiraishi, T. Nakayama, T. Nakaoka, A. Ohta, S. Miyazaki Electrochemical Society
2 国際会議録 Physics of Metal/High-k Interfaces T. Nakayama, K. Shiraishi, S. Miyazaki, Y. Akasaka, T. Nakaoka, K. Torii, A. Ohta, P. Ahmet, K. Ohmori, N. Umezawa, H. … Electrochemical Society	8 国際会議録 Asymmetric Distribution of Charge Trap in HfO₂-Based High-k Gate Dielectrics K. Higuchi, T. Naito, A. Uedono, K. Shiraishi, K. Torii, M. Boero, T. Chikyow, S. Yamosaki, K. Yamada, R. Hasumuma, K. … Electrochemical Society
3 国際会議録 THEORETICAL INVESTIGATION OF THE INTERFACES BETWEEN HF-BASED HIGH-K DIELECTRICS AND POLY-SI AND METAL GATES SHIRAISHI, K. 1,2,, NAKAYAMA, T. 3, AKASAKA, Y. 4, MlIYAZAKI, S. 5,2,, NAKAOKA, T. 1, OHMORI, K. 2, AHMET, P. 2, TORII, … Electrochemical Society	9 国際会議録 Control of Crystalline Microstructures in Metal Gate Electrodes for Nano CMOS Devices K. Ohmori, T. Chikyow, T. Hosoi, H. Watanabe, K. Nakajima Electrochemical Society
4 国際会議録 Theoretical Studies on Metal/High-k Gate Stacks K. Shiraishi, Y. Akasaka, G. Nakamura, T. Nakayama, S. Miyazaki, H. Watanabe, A. Ohta, K. Ohmori, T. Chikyow, Y. Nara, … Electrochemical Society	10 国際会議録 Characterization of Charge Trapping and Dielectric Breakdown of HfAlOx/SiON Dielectric Gate Stack Y. Pei, S. Nagamachi, H. Murakami, S. Higashi, S. Miyazaki, T. Kawahara, K. Torii, Y. Nara Electrochemical Society
5 国際会議録 Extensive Studies for Effects of Nitrogen Incorporation into Hf-Based High-k Gate Dielectrics N. Umezawa, K. Shiraishi, H. Watanabe, K. Toni, Y. Akasaka, S. Inumiya, M. Boero, A. Uedono, S. Miyazaki, T. Ohno, T. … Electrochemical Society	11 国際会議録 Combinatorial Fabrication and Characterization of Oxide and Metal Thin Film Composition Spreads P. Ahmet, T. Nagata, D. Kukuruznyak, K. Ohmori, K. Kakushima, K. Tsutsui, T. Chikyow, H. Iwai Electrochemical Society
6 国際会議録 Wide Controllability of Flatband Voltage in La₂O₃ Gate Stack Structures-Remarkable Advantages of La₂O₃ over HfO₂ K. Ohmori, P. Ahmet, K. Shiraishi, K. Yamabe, H. Watanabe, Y. Akasaka, N. Umezawa, K. Nakajima, M. Yoshitake, T. … Electrochemical Society	12 国際会議録 Relation between Solubility of Silicon in High-k Oxides and the Effect of Fermi Level Pinning N. Umezawa, K. Shiraishi, K. Kakushima, H. Iwai, K. Ohmori Electrochemical Society

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