Atomic Layer Deposited Hf₂2 and HfSiO to Enable CMOS Gate Dielectric Scaling, Mobility, and VTH Stability | 東京工業大学附属図書館文献データベース

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Atomic Layer Deposited Hf₂2 and HfSiO to Enable CMOS Gate Dielectric Scaling, Mobility, and VTH Stability

著者名:

M. Quevedo-Lopez

さらに 4 件

掲載資料名:

Atomic layer deposition : at the 208th ECS Meeting, October 16-21, 2005, Los Angeles, California, USA

シリーズ名:

ECS transactions

シリーズ巻号:

1(10)

発行年:

2006

開始ページ:

15

終了ページ:

28

総ページ数:

14

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566774437 [1566774438]

言語:

英語

請求記号:

E23400/1-10

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047104
シリーズID:	PA00000034
会議名:	ECS Meeting
回次:	208th
会議開催地:	Los Angeles, California, USA
会議開催年:	2005.10.16-2005.10.21

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