Rare-Earth Metal Scandate High-k Layers | 東京工業大学附属図書館文献データベース

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Rare-Earth Metal Scandate High-k Layers

著者名:

さらに 7 件

掲載資料名:

Physics and technology of high-k gate dielectrics III

シリーズ名:

ECS transactions

シリーズ巻号:

1(5)

発行年:

2006

開始ページ:

161

終了ページ:

176

総ページ数:

16

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566774444 [1566774446]

言語:

英語

請求記号:

E23400/1-5

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047099
シリーズID:	PA00000034
会議名:	International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues
回次:	3rd
会議開催地:	Los Angeles, California, USA
会議開催年:	2005.10.16-2005.10.21

類似資料:

1 国際会議録 16 Properties of HfTaxOy High-K Layers Deposited by ALCVD Zhao, C., Rittersma, Z. M., Van Berkum, J. G. M., Snijders, J. H. M., Hendriks, A., Breimer, P., Groat, P., Maes, J. W., … Electrochemical Society	7 国際会議録 Electron Spin Resonance Characterization of Defects at Interfaces in Stacks of Ultrathin High-k Dielectric Layers on Silicon Stesmans, A. L., Afanas'ev, V. V. Materials Research Society
2 国際会議録 Impact of High-k Properties on MOSFET Electrical Characteristics Pantisano, Ll., Ragnarsson, L. -A., Houssa, M., Degraeve, R., Groeseneken, G., Schram, T., Degendt, S., Heyns, M., … Springer	8 国際会議録 High-k Materials for Advanced Gate Stack Dielectrics: A Comparison of ALCVD and MOCVD as Deposition Technologies Caymax, Matty, Bender, H., Brijs, B., Conard, T., Gendt, S. De, Delabie, A., Heyns, M., Onsia, B., Ragnarsson, L., … Materials Research Society
3 国際会議録 On the impact of high-K properties (and defects) on MOSFET el ectrical characteristics (invited paper) Pantisano, L., Afanas'ev, V., Ragnarsson, L-A., Houssa, M., Degraeve, R., Groeseneken, G., Schram, T., DeGendt, S., … Electrochemical Society	9 国際会議録 Correlation between development of leakage current and hydrogen ionization in ultrathin silicon dioxide layers Afanas'ev, V. V., Stesmans, A. MRS-Materials Research Society
4 国際会議録 Growth and Physical Properties of MOCVD-Deposited Hafnium Oxide Films and Their Properties on Silicon Elshocht, S.Van, Caymax, M., Gendt, S.De, Conard, T., Petry, J., Claes, M., Witters, T., Zhao, C., Brijs, B., Richard, … Materials Research Society	10 国際会議録 Physcial Characterization of Ultrathin High-k Dielectrics Vandervorst, W., Brijs, B., Bender, H., Conard, O.T., Petry, J., Richard, O., Elshocht, S.Van, Delabie, A., Caymax, M., … Materials Research Society
5 国際会議録 Probing Point Defects in Stacks of Ultrathin High-k Metal Oxides on Semiconductors by Electron Spin Resonance: The Si/HfO₂ vs. the Ge/HfO₂ System A. Stesmans, V. Afanas'ev, K. Clemer Electrochemical Society	11 国際会議録 Point Defects and Traps in Stacks of Ultrathin High-k Metal Oxides on Si Probed by Electron Spin Resonance: Si/HfO2 System and N Incorporation Stesmans, A., Afanas'ev, V., Clemer, K., Chen, F., Campbell, S.A. Electrochemical Society
6 国際会議録 Defect Generation in High-K Dielectric Stacks: Characterization and Modelling M. Houssa, J. L. Autran, V. V. Afanas'ev, A. Stesmans, M. M. Heyns Electrochemical Society	12 国際会議録 13 High-k Gate Stack Engineering - towards Meeting Low Standby Power and High Performance Targets De Gendt, S., Brunco, D., Caymax, M., Canard, T., Date, L., Delabie, A., Deweerd, W., Groeseneken, G., Houssa, M., Hyun, … Electrochemical Society

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