SELECTIVE ETCHING OF SiGe FOR REMOVAL OF DUMMY LAYERS IN FULLY SILICIDED GATE ARCHITECTURES | 東京工業大学附属図書館文献データベース

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SELECTIVE ETCHING OF SiGe FOR REMOVAL OF DUMMY LAYERS IN FULLY SILICIDED GATE ARCHITECTURES

著者名:

さらに 4 件

掲載資料名:

Cleaning Technology in Semiconductor Device Manufacturing IX

シリーズ名:

ECS transactions

シリーズ巻号:

1(3)

発行年:

2006

開始ページ:

207

終了ページ:

213

総ページ数:

7

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566774291 [1566774292]

言語:

英語

請求記号:

E23400/1-3

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047097
シリーズID:	PA00000034
会議名:	International Symposium on Cleaning Technology in Semiconductor Device Manufacturing ; Fall Meeting of the Electrochemical Society
回次:	9th ; 2005
会議開催地:	Los Angeles, California, USA
会議開催年:	2005.10.00

類似資料:

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2 国際会議録 WAFER BACKSIDE METALLIC DECONTAMINATION CONTROL FOR FEOL PROCESSING Xu, K. 1,2, KRAUS, H. 1, Vos, R. 2, HELLIN, D. 2, RIP, J. 2, SNOW, J. 2, MERTENS, P. W. 2, ARCHER, L. 1, WAGNER, G. 1, … Electrochemical Society	8 国際会議録 EVALUATION OF MEGASONIC CLEANING SYSTEMS FOR PARTICLE REMOVAL EFFICIENCY AND DAMAGING Vereecke, G., Holsteyns, F., Veltens, J., Lux, M., Amauts, S., Kenis, K., Vos, R., Mertens, P., Heyns, M. Electrochemical Society
3 国際会議録 CLEANING OF METAL GATE STACKS FOR THE SUB 90 nm TECHNOLOGY NODE Snow, J., Kraus, H., Vermeyen, K., Fyen, W., Mertens, P., Kovacs, F. Electrochemical Society	9 国際会議録 Mechanism of Selective Etching of SiGe Layers in SiGe/Si Systems J. Kato, H. Oka, K. Kanemoto, H. Hisamatsu, Y. Matsuzawa Electrochemical Society
4 国際会議録 Post Salicidation Clean: Selective Removal of Un-Reacted NiPt Towards NiPtSi(Ge) K. Xu, A. Lauwers, R. Vos, L. Archer, H. Kraus Electrochemical Society	10 国際会議録 Wet Etching Step Evolutions for Selective Removal on Silicide or Germanide Applications V. Carron, P. Besson, F. Pierre Electrochemical Society
5 国際会議録 MECHANISMS OF PARTICLE REMOVAL DURING BRUSH SCRUBBER CLEANING Xu, K., Vos, R., Vereecke, G., Mertens, P., Heyns, M., Vinckier, C., Fransaer, J. Electrochemical Society	11 国際会議録 Microstructural Studies of Co Silicide Layers Formed on SiGe and SiGeC Jin, S., Bender, H., Donaton, R. A., Maex, K., Vantomme, A., Langouche, G., Amour, A. St., Sturm, J. C. MRS - Materials Research Society
6 国際会議録 27 Materials Issues of Ni Fully Silicided (FUSI) Gates for CMOS Applications Kittl, J. A., Lauwers, A., Pawlak, M. A., Demeurisse, C., Anil, K. G., Veloso, A., van Dal, M. J. H., Schram, T., Brijs, … Electrochemical Society	12 国際会議録 OPTIMIZATION OF A BRUSH SCRUBBER FOR NANO-SIZED PARTICLES Xu, K., Vos, R., Arnauts, S., Lux, M., Schaetzlein, W., Speh, U., Mertens, P., Heyns, M., Vinckier, C. Electrochemical Society

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