Hydrogen-Induced Reversible Changes in Drain Current of Pt-Gated AlGaN/GaN High Electron Mobility Transistors (HEMT)

State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI

シリーズ名:

ECS transactions

シリーズ巻号:

1(2)

発行年:

2006

開始ページ:

274

終了ページ:

283

総ページ数:

10

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566774314 [1566774314]

言語:

英語

請求記号:

E23400/1-2

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047096
シリーズID:	PA00000034
会議名:	State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; Symposium on Nitride and Wide Bandgap Semiconductors for Sensors, Photonics and Electronics ; Meeting of the Electrochemical Society
回次:	43rd ; 6th ; 208th
会議開催地:	Los Angeles, CA, USA
会議開催年:	2005.10.16-2005.10.21

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