Prospect of High-k/Metal Gate Stack Technology for Future CMOS Devices

Prospect of High-k/Metal Gate Stack Technology for Future CMOS Devices

著者名:

B. H. Lee

掲載資料名:

Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5

シリーズ名:

ECS transactions

シリーズ巻号:

1(1)

発行年:

2005

開始ページ:

29

終了ページ:

38

総ページ数:

10

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566774307 [1566774306]

言語:

英語

請求記号:

E23400/1-1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047095
シリーズID:	PA00000034
会議名:	International Symposium on The Physics and Chemistry of SiO2 and the Si-SiO2 Interface ; Fall Meeting of the Electrochemical Society
回次:	5th ; 2005
会議開催地:	Los Angeles, CA, USA
会議開催年:	2005.10.16-2005.10.20

類似資料:

1 国際会議録 Recent Development of CMOS Technology with Hf-Based High-k Dielectric Song, S.C., Bersuker, G., Zhang, Z., Lee, B.H., Huffman, C., Bae, S.H., Sim, J.H., Kirsch, P., Majhi, P., Moumen, N,, … Electrochemical Society	7 国際会議録 High Performance Metal Gate CMOSFETs with Aggressively Scaled Hf-Based High-k S. Song, G. L. Zhang, S. Bae, P. Kirsch, P. Majhi, R. Choi, B. Lee Electrochemical Society
2 国際会議録 Towards Understanding of Processing-nanostructure-property Inter-relationships in High-k/Metal Gate Stacks Majhi, P., Bersuker, G., Lee, B. H. Springer	8 国際会議録 SUB-NANOMETER HIGH -K GATE STACK SCALING USING THE HF-LAST/NH3 AKNEAL INTERFACE Peterson, J., Barnett, J., Young, C., Hou, A., Gutt, J., Gopalan, S., Lee, C.H., Li, H.J., Moumen, N., Chaudhary, N., … Electrochemical Society
3 国際会議録 SURFACE PREPARATION ISSUES ASSOCIATED WITH HIGH-к/METAL GATE DEVICES J. Bamett, N. Moumen, J. J. Peterson, P. Kirsch, A. Neugroschel, G. Bersuker, H . R. Huff Electrochemical Society	9 国際会議録 Experimental Study of Etched Back Thermal Oxide for Optimization of the Si/High-k Interface Barnett, Joel, Moumen, N., Gutt, J., Gardner, M., Huffman, C., Majhi, P., Peterson, J.J., Gopalan, S., Foran, B., Li, … Materials Research Society
4 国際会議録 Atomic Layer Deposited Hf₂2 and HfSiO to Enable CMOS Gate Dielectric Scaling, Mobility, and VTH Stability P. Kirsch, M. Quevedo-Lopez, S. Krishnan, S. Song, R. Choi, P. Majhi, Y. Senzaki, G. Bersuker, B. Lee Electrochemical Society	10 国際会議録 17 Properties of the Interfacial Layer in the High-k Gate Stack and Transistor Performance Bersuker, G., Peterson, J., Burnett, J., Korkin, A., Sim, J.H., Choi, R., Lee, B. H., Greer, J., Lysaght, P., Huff, H.R. Electrochemical Society
5 国際会議録 33 ALD of Advanced High-k and Metal Gate Stacks for MOS Devices Gutt, J., Gopalan, S., Brown, G. A., Kirsch, P. D., Peterson, J. J., Gardner, M., Li, H.-J., Lysaght, P., Alshareef, H. … Electrochemical Society	11 国際会議録 Mechanism of Charge Trapping Reduction in Scaled High-k Gate Stacks Bersuker, G, Lee, B. H, Huff, H. R, Gavartin, J, Shluger, A Springer
6 国際会議録 Towards 0.5 nm EOT Scaling of HfO2/Metal Electrode Gate Stacks Peterson, J. J., Brown, G. A., Matthews, K., Gutt, J., Gopalan, S., Li, H. -J., Kirsch, P., Barnett, J., Moumen, N., … Electrochemical Society	12 国際会議録 High and Low Stress Voltage Instabilities in High-K Gate Stacks G. Bersuker, C. Young, D. Heh, R. Choi, B. Lee Electrochemical Society

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