HgCdTe heterostructures grown by MBE on Si(310) substrates: structural and electrophysical properties

HgCdTe heterostructures grown by MBE on Si(310) substrates: structural and electrophysical properties

著者名:

M. V. Yakushev ( Institute of Semiconductor Physics (Russia) )

A. A. Babenko ( Institute of Semiconductor Physics (Russia) )

V. S. Varavin ( Institute of Semiconductor Physics (Russia) )

V. V. Vasil'ev ( Institute of Semiconductor Physics (Russia) )

L. V. Mironova ( Institute of Semiconductor Physics (Russia) )

D. N. Pridachin ( Institute of Semiconductor Physics (Russia) )

V. G. Remesnik ( Institute of Semiconductor Physics (Russia) )

I. V. Sabrinina ( Institute of Semiconductor Physics (Russia) )

Yu. G. Sidorov ( Institute of Semiconductor Physics (Russia) )

A. O. Suslyakov ( Institute of Semiconductor Physics (Russia) )

さらに 5 件

掲載資料名:

19th international conference on photoelectronics and night vision devices : 23-26 May 2006, Moscow, Russia

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

6636

発行年:

2007

出版情報:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819467829 [0819467820]

言語:

英語

請求記号:

P63600/6636

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046938
シリーズID:	PA00000029
会議名:	International Conference on Photoelectronics and Night Vision Devices
回次:	2006 : 19th
会議開催地:	Moscow, Russia
会議開催年:	2006.05.23-2006.05.26

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