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Study of mask structure for 45-nm node based on manufacturability and lithographic performance

著者名:
J. G. Doh ( Samsung Electronics Co., Ltd. (South Korea) )
C. H. Park ( Samsung Electronics Co., Ltd. (South Korea) )
Y. S. Moon ( Samsung Electronics Co., Ltd. (South Korea) )
B. H. Kim ( Samsung Electronics Co., Ltd. (South Korea) )
S. W. Kwon ( Samsung Electronics Co., Ltd. (South Korea) )
S. Y. Choi ( Samsung Electronics Co., Ltd. (South Korea) )
S. H. Kim ( Samsung Electronics Co., Ltd. (South Korea) )
S. Y. Kim ( Samsung Electronics Co., Ltd. (South Korea) )
B. G. Kim ( Samsung Electronics Co., Ltd. (South Korea) )
S. G. Woo ( Samsung Electronics Co., Ltd. (South Korea) )
H. K. Cho ( Samsung Electronics Co., Ltd. (South Korea) )
さらに 6 件
掲載資料名:
Photomask and next-generation lithography mask technology XIV
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
6607
発行年:
2007
出版情報:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819467454 [0819467456]
言語:
英語
請求記号:
P63600/6607
資料種別:
国際会議録

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