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Microscopic modeling of impact-ionization noise in SiGe heterojunction bipolar transistors

著者名:
  • M. Ramonas ( Bundeswehr Univ. (Germany) and Semiconductor Physics Institute (Lithuania) )
  • C. Jungemann ( Bundeswehr Univ. (Germany) )
  • P. Sakalas ( Dresden Univ. of Technology (Germany) and Semiconductor Physics Institute (Lithuania) )
  • M. Schroeter ( Dresden Univ. of Technology (Germany) and Univ. of California, San Diego (USA) )
  • W. Kraus ( Atmel Germany GmbH (Germany) )
掲載資料名:
Noise and fluctuations in circuits, devices, and materials : 21-24 May 2007, Florence, Italy
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
6600
発行年:
2007
出版情報:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819467379 [0819467375]
言語:
英語
請求記号:
P63600/6600
資料種別:
国際会議録

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