AlGaN/GaN MOS transistors using crystalline ZrO2 as gate dielectric

AlGaN/GaN MOS transistors using crystalline ZrO2 as gate dielectric

著者名:

X. Gu ( Virginia Commonwealth Univ. (USA) )

N. Izyumskaya ( Virginia Commonwealth Univ. (USA) )

V. Avrutin ( Virginia Commonwealth Univ. (USA) )

J. Xie ( Virginia Commonwealth Univ. (USA) )

S. Chevtchenko ( Virginia Commonwealth Univ. (USA) )

B. Xiao ( Virginia Commonwealth Univ. (USA) )

H. Morkoc ( Virginia Commonwealth Univ. (USA) )

さらに 2 件

掲載資料名:

Gallium nitride materials and devices II : 22-25 January 2007, San Jose, California, USA

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

6473

発行年:

2007

出版情報:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819465863 [0819465860]

言語:

英語

請求記号:

P63600/6473

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046781
シリーズID:	PA00000029
会議名:	Photonics West - Optoelectronic Materials and Devices : Gallium Nitride Materials and Devices
回次:	2007 : 2nd
会議開催地:	San Jose, California, USA
会議開催年:	2007.01.22-2007.01.25

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