Enhanced luminescence from AlxGa1-xN/AlyGa1-yN quantum wells grown by gas source molecular beam epitaxy with ammonia
- 著者名:
S. A. Nikishin ( Texas Tech Univ. (USA) ) B. A. Borisov ( Texas Tech Univ. (USA) ) G. A. Garrett ( U.S. Army Research Lab. (USA) ) W. L. Sarney ( U.S. Army Research Lab. (USA) ) A. V. Sampath ( U.S. Army Research Lab. (USA) ) H. Shen ( U.S. Army Research Lab. (USA) ) M. Wraback ( U.S. Army Research Lab. (USA) ) M. Holtz ( Texas Tech Univ. (USA) ) - 掲載資料名:
- Gallium nitride materials and devices II : 22-25 January 2007, San Jose, California, USA
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 6473
- 発行年:
- 2007
- 出版情報:
- Bellingham, Wash.: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819465863 [0819465860]
- 言語:
- 英語
- 請求記号:
- P63600/6473
- 資料種別:
- 国際会議録
類似資料:
Materials Research Society |
Electrochemical Society |
SPIE - The International Society of Optical Engineering |
Materials Research Society |
SPIE - The International Society of Optical Engineering |
MRS-Materials Research Society |
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Materials Research Society |
MRS-Materials Research Society |
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Materials Research Society |
12
国際会議録
GaInNAs/GaAs Multiple Quantum Wells at 1.3 μm Wavelength Grown by Gas-Source Molecular Beam Epitaxy
Electrochemical Society |