Two-step epitaxial lateral overgrowth of a-plane GaN by MOCVD

Two-step epitaxial lateral overgrowth of a-plane GaN by MOCVD

著者名:

X. Ni ( Virginia Commonwealth Univ. (USA) )

U. Ozgur ( Virginia Commonwealth Univ. (USA) )

H. Morkoc ( Virginia Commonwealth Univ. (USA) )

A. A. Baski ( Virginia Commonwealth Univ. (USA) )

Z. Liliental-Weber ( Lawrence Berkeley National Lab. (USA) )

H. O. Everitt ( Duke Univ. (USA) and U.S. Army Aviation & Missile Research, Development and Engineering Ctr. (USA) )

さらに 1 件

掲載資料名:

Gallium nitride materials and devices II : 22-25 January 2007, San Jose, California, USA

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

6473

発行年:

2007

出版情報:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819465863 [0819465860]

言語:

英語

請求記号:

P63600/6473

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046781
シリーズID:	PA00000029
会議名:	Photonics West - Optoelectronic Materials and Devices : Gallium Nitride Materials and Devices
回次:	2007 : 2nd
会議開催地:	San Jose, California, USA
会議開催年:	2007.01.22-2007.01.25

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