Blank Cover Image

The effect of junction temperature on the optoelectrical properties of green InGaN/GaN multiple quantum well light-emitting diodes

著者名:
W. Chen ( Chang Gung Univ. (Taiwan) )
D. Kuo ( Chang Gung Univ. (Taiwan) )
C. Hung ( Chang Gung Univ. (Taiwan) )
C. Ke ( Chang Gung Univ. (Taiwan) )
H. Shen ( Chang Gung Univ. (Taiwan) )
J. Wang ( Chang Gung Univ. (Taiwan) )
Y. Wu ( Chang Gung Univ. (Taiwan) )
T. Nee ( Chang Gung Univ. (Taiwan) )
さらに 3 件
掲載資料名:
Physics and simulation of optoelectronic devices XV : 22-25 January 2007, San Jose, California, USA
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
6468
発行年:
2007
出版情報:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819465818 [081946581X]
言語:
英語
請求記号:
P63600/6468
資料種別:
国際会議録

類似資料:

1 国際会議録 Characterization of the carrier localization confinement for InGaN/GaN multiple quantum well heterostructures with hydrogen-flow treatments

T. Kuo, W. Chen, C. Ke, C. Hung, H. Shen, J. Wang, Y. Wu, T. Nee

SPIE - The International Society of Optical Engineering
7 国際会議録 Photoluminescence dynamics and structural investigation of InGaN/GaN multiple quantum well light emitting diodes grown by metalorganic chemical vapor deposition

Z. S. Lee, Z. C. Feng, A. G. Li, H. L. Tsai, J. R. Yang, Y. F. Chen, N. Li, I. T. Ferguson, W. Lu

SPIE - The International Society of Optical Engineering
2 国際会議録 Optical properties of Berthelot-type behaviors in quaternary AlInGaN multiple quantum well heterostructures

C. Hung, C. Ke, D. Kuo, W. Chen, H. Shen, Y. Wu, J. Wang, T. Nee

SPIE - The International Society of Optical Engineering
8 国際会議録 Effect of plasma-induced damage on electrical properties of InGaN/GaN multiple quantum well light-emitting diodes

Chi Won Ok, Yoon-Bong Hahn

Elsevier
3 国際会議録 Characterization of the carrier dynamics and interface-state charge fluctuations in quaternary AlInGaN multiple quantum well heterostructures

C. Ke, C. Hung, D. Kuo, W. Chen, H. Shen, Y. Wu, J. Wang, T. Nee

SPIE - The International Society of Optical Engineering
9 国際会議録 Optical and structural investigation on InGaN/GaN multiple quantum well light-emitting diodes grown on sapphire by metalorgonic chemical vapor deposition …

Feng, Z. C., Chen, J., Tsai, H., Yang, J., Li, P., Wetzel, C., Detchprohm, T., Nelson, J., Ferguson, I. T.

SPIE - The International Society of Optical Engineering
4 国際会議録 Optical and structural properties of dual wavelength InGaN/GaN multiple quantum well light emitting diodes

Z. C. Feng, T.-W. Kuo, C. Y. Wu, H.-L. Tsai, J.-R. Yan

Society of Photo-optical Instrumentation Engineers
10 国際会議録 Surface-state charge fluctuations on the carrier dynamics in InGaN/GaN blue light-emitting diodes with multiquantum barriers [6184-58]

Wang C., Lin R.-M, Nee T.-E

SPIE - The International Society of Optical Engineering
5 国際会議録 Temperature dependence of light-output performance of InGaN/GaN multiple-quantum-well light-emitting diodes with various In compositions

Huh, C., Schaff, W/J., Eastman, Lester F., Park, S.-J.

SPIE - The International Society of Optical Engineering
11 国際会議録 The role of acceptor anneal temperature on the performance of InGaN/GaN quantum well light emitting diodes

Thomson, J.D., Pope, I.A., Smowton, P.M., Blood, P., Lynch, R.J., Hill, G., Wang, T., Parbrook, P.J.

SPIE - The International Society of Optical Engineering
6 国際会議録 Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

Cao, X. A., LeBoeuf, S. F., Garrett, J. L., Ebong, A., Rowland, L. B., Arthur, S. D.

Materials Research Society
12 国際会議録 On-chip very low junction temperature GaN-based light emitting diodes by selective ion implantation

Y.-W. Cheng, H. H. Chen, M.-Y. Ke, C.-P. Chen, J. Huang

Society of Photo-optical Instrumentation Engineers
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12