Blank Cover Image

Paramagnetic Defects and Photoluminescence in Carbon Rich a-SiC:H Films: Role of Hydrogen and Excess of Carbon

著者名:
A.V. Vasin
A.A. Konchits
S.P. Kolesnik
A.V. Rusavsky
V.S. Lysenko
A.N. Nazarov
Y. Ishikawa
S. Ashok
さらに 3 件
掲載資料名:
Semiconductor defect engineering--materials, synthetic structures and devices II : symposium held April 9-13, 2007, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
994
発行年:
2007
開始ページ:
321
終了ページ:
326
総ページ数:
6
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558999541 [155899954X]
言語:
英語
請求記号:
M23500/994
資料種別:
国際会議録

類似資料:

1 国際会議録 Thermal Transformation of Hydrogen Bonds in a-SiC:H Films: Structural and Optical Properties

Vasin, Andrey V., Kolesnik, Sergey P., Konchits, Andrey A., Lysenko, Vladimir S., Nazarov, Alexey N., Rusavsky, Andrey …

Materials Research Society
7 国際会議録 C-V and thermally activated investigation of ZMR SOI meza structures

Nazarov, A.N., Lysenko, V.S., Gusev, V.A., Kilchitskaya, V.I.

Electrochemical Society
2 国際会議録 Comparative Study of Near Stochiometric a-SiC:H and a-SiC Films: Effect of the Bonded Hydrogen

Vasin, A.V., Rusavsky, A.V., Kushnirenko, V.I., Starik, S.P., Kutsay, O.M., Nazarov, A.N., Lysenko, V.S., Semenov, A.V., …

Springer
8 国際会議録 Nature of high-temperature charge instability of fully depleted SOI MOSFETs

Nazarov, A.N., Lysenko, V.S., Colinge, J.P., Flandre, D.

Electrochemical Society
3 国際会議録 High-Frequency Electron Paramagnetic Resonance Study of the As-Deposited and Annealed Carbon-Rich Hydrogenated Amorphous Silicon-Carbon Films

A. V. Vasin, E. N. Kalabukhova, S. N. Lukin, D. V. Savchenko, V. S. Lysenko, A. N. Nazarov, A. V. Rusavsky, Y. Koshka

Materials Research Society
9 国際会議録 Carbonization of Porous Silicon for 3C-SiC Growth

A.V. Vasin, Y. Ishikawa, N. Shibata, J. Salonen, V.P. Lehto

Trans Tech Publications
4 国際会議録 Study Of Er-Related Defects In A-Si:H:Er Films Used In Light Emitting Heterostructures

Nazarov, A., Vovk, Ja., Lysenko, V., Kon’kov, O., Terukov, E., Ashok, S.

Materials Research Society
10 国際会議録 Parameter Extraction for Buried Oxide Traps from High-Temperature Kink Effect of Back- Channel SOI TM n-MOSFET

Nazarov, A N, Barchuk, I P, Lysenko, V S L, Colinge, J P

Electrochemical Society
5 国際会議録 Charge Trapping in High-Dose Ge-Implanted and Si- Implanted Silicon-Dioxide Thin Films

Nazarov, A.N., Osiyuk, I.N., Tyagulskii, I.P., Lysenko, V.S., Gebel, T., Skorupa, W.

Electrochemical Society
11 国際会議録 High-temperature behavior of fully-depleted SOI MOSFETs in case of charge instability of buried oxide

Nazarov, A.N., Houk, Y., Vovk, Ya.N., Lysenko, V.S., Flandre, D.

Electrochemical Society
6 国際会議録 Hydrogen-Enhanced Defect Reactions in Silicon: Interstitial Atom - Vacancy

Nazarov, A. N., Pinchuk, V. M., Yanchuk, T. V., Lysenko, V. S.

MRS - Materials Research Society
12 国際会議録 Properties of SOI MOSFET's obtained on multilayer buried dielectrics

Lysenko, V.S., Nazarov, A.N., Rudenko, T.E., Rudenko, A.N., Kilchitskaya, V.I., Givargizov, E.I., Limanov, A.B.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12