Advances in SiGeSn/Ge Technology

Advances in SiGeSn/Ge Technology

著者名:

掲載資料名:

Group IV semiconductor nanostructures--2006 : symposium held November 27-December 1, 2006, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

958

発行年:

2007

開始ページ:

13

終了ページ:

24

総ページ数:

12

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558999152 [1558999159]

言語:

英語

請求記号:

M23500/958

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046622
シリーズID:	PA00000011
会議名:	MRS Fall Meeting : Symposium L
回次:	2006
会議開催地:	Boston, Massachusetts, USA
会議開催年:	2006.11.27-2006.12.01

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