Enhanced Antimony Activation for Ultra-Shallow Junctions in Strained Silicon | 東京工業大学附属図書館文献データベース

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Enhanced Antimony Activation for Ultra-Shallow Junctions in Strained Silicon

著者名:

さらに 6 件

掲載資料名:

Doping engineering for device fabrication : symposium held April 18-19, 2006, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

912

発行年:

2006

開始ページ:

59

終了ページ:

64

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998681 [1558998683]

言語:

英語

請求記号:

M23500/912

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046616
シリーズID:	PA00000011
会議名:	MRS Spring Meeting : Symposium C
回次:	2006
会議開催地:	San Francisco, California, USA
会議開催年:	2006.04.18-2006.04.19

類似資料:

1 国際会議録 Doping and Mobility Profiles in Defect-Engineered Ultra-Shallow Junctions : Bulk and SOI Smith, A.J., Colombeau, B., Gwilliam, R., Collart, E., Cowern, N.E.B., Sealy, B.J. Materials Research Society	7 国際会議録 Structural and Compositional Evolution of Self-Assembled Germanium Islands on Silicon (001) During High Growth Rate LPCVD Dilliway, Gabriela D. M., Cowern, Nicholas E. B., Jeynes, Chris, O'Reilly, Lisa, McNally, Patrick J., Bagnall, Darren M. Materials Research Society
2 国際会議録 Vacancy Engineering - An Ultra-Low Thermal Budget Method for High-Concentration ‘Diffusionless’' Implantation Doping N.E.B. Cowern, A.J. Smith, N.S. Bennett, B.J. Sealy, R. Gwilliam Trans Tech Publications	8 国際会議録 Role of Silicon and Boron Interstitial Clusters in Transient Enhanced Diffusion Cowern, N.E.B., Mannino, G., Roozeboom, F., van Berkum, J.G.M, Colombeau, B., Claverie, A. Electrochemical Society
3 国際会議録 Current Understanding and Modeling of B Diffusion and Activation Anomalies in Preamorphized Ultra-Shallow Junctions Colombeau, B., Smith, A.J., Cowern, N.E.B., Pawlak, B.J., Cristiano, F., Duffy, R., Claverie, A., Ortiz, C.J., Pichler, … Materials Research Society	9 国際会議録 Physics-Based Diffusion Simulations for Preamorphized Ultra-Shallow Junctions Cowern, N. E. B., Colombeau, B., Lampin, E., Cristiano, F., Claverie, A., Lamrani, Y., Duffy, R., Venezia, V., Heringa, … Materials Research Society
4 国際会議録 Low Temperature B Activation in SOI Using Optimized Vacancy Engineering Implants Smith, A.J., Colombeau, B., Bennett, N., Gwilliam, R., Cowern, N., Sealy, B. Materials Research Society	10 国際会議録 TRANSIENT DIFFUSION OF SOPANTS IN SILICON: PHYSICS MODELING, AND PRACTICAL SIMULATIONS Cowern, N.E.B. Electrochemical Society
5 国際会議録 The Role of Preamorphization and Activation for Ultra Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer Pawlak, B.J., Vandervorst, W., Lindsay, R., Wolf, I.De, Roozeboom, F., Delhougne, R., Benedetti, A., Loo, R., Caymax, … Materials Research Society	11 国際会議録 5 Effect of Amorphization on Activation and Deactivation of Boron in Source/Drain, Channel and Poly Gate Pawlak, B.J., Duffy, R., Janssens, T., Vandenorst, W., Seven, S., Richard, O., Benedetti, A., Eyben, P., Colombeau, B., … Electrochemical Society
6 国際会議録 The Role of Preamorphization and Activation for Ultra-Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer Pawlak, B.J., Vandervorst, W., Lindsay, R., Wolf, I.De, Roozeboom, F., Delhougne, R., Benedetti, A., Loo, R., Caymax, … Materials Research Society	12 国際会議録 Electrical Profiles of Ultra-Low Energy Antimony Implants in Silicon Alzanki, T., Gwilliam, R., Emerson, N., Sealy, B.J., Collart, E. Materials Research Society

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