Time-Dependent Bias Stress-Induced Instability of SiC MOS Devices

Time-Dependent Bias Stress-Induced Instability of SiC MOS Devices

著者名:

Aivars Lelis

掲載資料名:

Silicon carbide 2006--materials, processing and devices : symposium held April 18-20, 2006, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

911

発行年:

2006

開始ページ:

335

終了ページ:

340

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998674 [1558998675]

言語:

英語

請求記号:

M23500/911

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046615
シリーズID:	PA00000011
会議名:	MRS Spring Meeting : Symposium B
回次:	2006
会議開催地:	San Francisco, California, USA
会議開催年:	2006.04.18-2006.04.20

類似資料:

1 国際会議録 Bias Stress-Induced Threshold-Voltage Instability of SiC MOSFETs Lelis, A.J., Habersat, D.B., Lopez, G., McGarrity, J.M., McLean, F.B., Goldsman, N. Trans Tech Publications	7 国際会議録 Investigation of Drain Current Saturation in 4H-SiC MOSFETs G. Pennington, S. Potbhare, N. Goldsman, D. Habersat, A. Lelis, J.M. McGarrity, C. Ashman Trans Tech Publications
2 国際会議録 Simulating the Influence of Mobile Ionic Oxide Charge on SiC MOS Bias-Temperature Instability Measurements D.B. Habersat, N. Goldsman, A.J. Lelis Trans Tech Publications	8 国際会議録 Bias-Temperature-Stress Response of Commercially-Available SiC Power MOSFETs R. Green, A. Lelis, M. El, D. Habersat Trans Tech Publications
3 国際会議録 Using a First Principles Coulomb Scattering Mobility Model for 4H-SiC MOSFET Device Simulation Potbhare, S., Pennington, G., Goldsman, N., Lelis, A.J., Habersat, D.B., McLean, F.B., McGarrity, J.M. Trans Tech Publications	9 国際会議録 Temperature-Dependence of SiC MOSFET Threshold-Voltage Instability A.J. Lelis, D.B. Habersat, R. Green, N. Goldsman Trans Tech Publications
4 国際会議録 The Effect of Nitridation on SiC MOS Oxides as Evaluated by Charge Pumping D.B. Habersat, A.J. Lelis, J.M. McGarrity, F.B. McLean, S. Potbhare Trans Tech Publications	10 国際会議録 Implications of Threshold-Voltage Instability on SiC DMOSFET Operation A.J. Lelis, D.B. Habersat, R. Green, N. Goldsman Trans Tech Publications
5 国際会議録 On Separating Oxide Charges and Interface Charges in 4H-SiC Metal-Oxide-Semiconductor Devices Habersat, D.B., Lelis, A.J., Lopez, G., McGarrity, J.M., McLean, F.B. Trans Tech Publications	11 国際会議録 Effect of SiC Power DMOSFET Threshold-Voltage Instability A.J. Lelis, D. Habersat, R. Green, A. Ogunniyi, M. Gurfinkel, J. Suehle, N. Goldsman Materials Research Society
6 国際会議録 Time Dependent Trapping and Generation-Recombination of Interface Charges: Modeling and Characterization for 4H-SiC MOSFETs S. Potbhare, N. Goldsman, G. Pennington, A. Lelis, J.M. McGarrity Trans Tech Publications	12 国際会議録 Improvements in SiC MOS Processing as Revealed by Studies of Fixed and Oxide Trap Charge D.B. Habersat, A.J. Lelis, S. Potbhare, N. Goldsman Trans Tech Publications

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