Control of Trenching and Surface Roughness in Deep Reactive Ion Etched 4H and 6H SiC

Control of Trenching and Surface Roughness in Deep Reactive Ion Etched 4H and 6H SiC

著者名:

掲載資料名:

Silicon carbide 2006--materials, processing and devices : symposium held April 18-20, 2006, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

911

発行年:

2006

開始ページ:

329

終了ページ:

334

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998674 [1558998675]

言語:

英語

請求記号:

M23500/911

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046615
シリーズID:	PA00000011
会議名:	MRS Spring Meeting : Symposium B
回次:	2006
会議開催地:	San Francisco, California, USA
会議開催年:	2006.04.18-2006.04.20

類似資料:

1 国際会議録 Deep Reactive Ion Etching (DRIE) of High Aspect Ratio SiC Microstructures Using a Time-Multiplexed Etch-Passivate Process Evans, L.J., Beheim, G.M. Trans Tech Publications	7 国際会議録 Deep reactive ion etch conditioning recipe Wasilik, M., Chen, N. SPIE - The International Society of Optical Engineering
2 国際会議録 Electrical Properties of 4H-SiC Thin Films Reactively Ion-Etched in SF6/O2 Plasma Kim, B. S., Jeong, J. K., Um, M. Y., Na, H. J., Song, I. B., Kim, H. J. Trans Tech Publications	8 国際会議録 6A, 1kV 4H-SiC Normally-Off Trenched-and-Implanted Vertical JFETs Zhao, J.H., Tone, K., Li, X., Alexandrov, P., Fursin, L., Weiner, M. Trans Tech Publications
3 国際会議録 Electrical Properties of 4H-SiC Thin Films Reactively Ion-Etched in SF6/O2 Plasma Kim, B.S., Jeong, J.K., Um, M.Y., Na, H.J., Song, I.B., Kim, H.J. Trans Tech Publications	9 国際会議録 REACTIVE ION ETCH OF GaAs AND AlGaAs USING BCl3, SiCl4 AND SF6 INSTEAD OF CCl2F2 Wu, J. W., Chang, C. Y., Lin, K. C., Chang, E. Y., Hwang, J. H. MRS - Materials Research Society
4 国際会議録 Long-Term Characterization of 6H-SiC Transistor Integrated Circuit Technology Operating at 500 ℃ Philip G. Neudeck, David J. Spry, Liang-Yu Chen, Carl W. Chang, Glenn M. Beheim, Robert S. Okojie, Laura J. Evans, Roger … Materials Research Society	10 国際会議録 EFFECTS OF POST ETCH TREATMENTS ON CONTAMINATED SILICON SURFACE DUE TO CHF3/C2F6 REACTIVE ION ETCHING Park, H.-H., Kwon, K.-H., Lee, S.-H., Nahm, S., Lee, J.-W., Koak, B.-H., Suh, K.-S., Kwon, O.-J., Lee, J.-L., Yeom, … MRS - Materials Research Society
5 国際会議録 Confinement of Screw Dislocations to Predetermined Lateral Positions in (0001) 4H-SiC Epilayers Using Homoepitaxial Web Growth Neudeck, Philip G., Spry, David J., Trunek, Andrew J., Powell, J.Anthony, Beheim, Glenn M. Materials Research Society	11 国際会議録 Impact of CF₄ Plasma Treatment on the Surface Roughness of Ion Implanted SiC Induced by High Temperature Annealing T. Sugimoto, M. Satoh, T. Nakamura, K. Mashimo, H. Doi Trans Tech Publications
6 国際会議録 Large-displacement microactuators in deep reactive ion-etched single-crystal silicon Smith,G.L., Maloney,J.M., Fan,L., DeVoe,D.L. SPIE-The International Society for Optical Engineering	12 国際会議録 SURFACE AND INTERFACE DAMAGE CHARACTERIZATION OF REACTIVE ION ETCHED MBE REGROWN GaAs Cole, M.W., Dutta, M., Rossabi, J., Smith, D.D., Lehman, J.L. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12