Ion Implanted p+/n 4H-SiC Junctions: Effect of the Heating Rate During Post Implantation Annealing

Ion Implanted p+/n 4H-SiC Junctions: Effect of the Heating Rate During Post Implantation Annealing

著者名:

Roberta Nipoti

掲載資料名:

Silicon carbide 2006--materials, processing and devices : symposium held April 18-20, 2006, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

911

発行年:

2006

開始ページ:

311

終了ページ:

316

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998674 [1558998675]

言語:

英語

請求記号:

M23500/911

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046615
シリーズID:	PA00000011
会議名:	MRS Spring Meeting : Symposium B
回次:	2006
会議開催地:	San Francisco, California, USA
会議開催年:	2006.04.18-2006.04.20

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1 国際会議録 Current Analysis of Ion Implanted p+/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient Nipoti, R., Bergamini, F., Moscatelli, F., Poggi, A., Canino, M., Bertuccio, G. Trans Tech Publications	7 国際会議録 Contact Resistivity of Al/Ti Ohmic Contacts on p-Type Ion Implanted 4H- and 6H-SiC Nipoti, Roberta, Moscatelli, Francesco, Scorzoni, Andrea, Poggi, Antonella, Cardinali, Gian Carlo, Lazar, Mihai, … Materials Research Society
2 国際会議録 Ar Annealing at 1600℃ and 1650℃ of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the J-V Characteristics Versus Annealing Temperature Bergamini, F., Moscatelli, F., Canino, M., Poggi, A., Nipoti, R. Trans Tech Publications	8 国際会議録 Nitridation of the SiO₂/SiC Interface by N⁺ Implantation: Hall versus Field Effect Mobility in n-Channel Planar 4H-SiC MOSFETs F. Moscatelli, A. Poggi, S. Solmi, R. Nipoti, A. Armigliato Trans Tech Publications
3 国際会議録 Room Temperature Annealing Effects on Leakage Current of Ion Implanted p+n 4H-SiC Diodes F. Moscatelli, F. Bergamini, A. Poggi, M. Passini, F. Tamarri Trans Tech Publications	9 国際会議録 Ion Implanted p+/n Diodes: Post-Implantation Annealing in a Silane Ambient in a Cold-Wall Low-Pressure CVD Reactor Bergamini, F., Rao, S.P., Poggi, A., Tamarri, F., Saddow, S.E., Nipoti, R. Trans Tech Publications
4 国際会議録 Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process M. Canino, F. Giannazzo, F. Roccaforte, A. Poggi, S. Solmi, V. Raineri, R. Nipoti Trans Tech Publications	10 国際会議録 SiC Donor Doping by 300°C P Implantation: Characterization of the Doped Layer Properties in Dependence of the Post-Implantation Annealing Temperature Poggi, A., Nipoti, R., Moscatelli, F., Cardinali, G.C., Canino, M. Trans Tech Publications
5 国際会議録 Post-Implantation Annealing of SiC: Relevance of the Heating Rate R. Nipoti Trans Tech Publications	11 国際会議録 Effects of Very High Neutron Fluence Irradiation on p+n Junction 4H-SiC Diodes F. Moscatelli, A. Scorzoni, A. Poggi, M. Passini, G. Pizzocchero, R. Nipoti Trans Tech Publications
6 国際会議録 Characterization of Phosphorus Implanted n⁺/p Junctions Integrated as Source/Drain Regions in a 4H-SiC n-MOSFET F. Moscatelli, R. Nipoti, A. Poggi, S. Solmi, S. Cristiani Trans Tech Publications	12 国際会議録 Characterization of a Thermal Oxidation Process on SiC Preamorphized by Ar Ion Implantation Poggi, A., Nipoti, R., Solmi, S., Bersani, M., Vanzetti, L. Trans Tech Publications

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