Electrical Measurement of the Vanadium Acceptor Level in 4H- and 6H-SiC

Electrical Measurement of the Vanadium Acceptor Level in 4H- and 6H-SiC

著者名:

掲載資料名:

Silicon carbide 2006--materials, processing and devices : symposium held April 18-20, 2006, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

911

発行年:

2006

開始ページ:

225

終了ページ:

230

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998674 [1558998675]

言語:

英語

請求記号:

M23500/911

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046615
シリーズID:	PA00000011
会議名:	MRS Spring Meeting : Symposium B
回次:	2006
会議開催地:	San Francisco, California, USA
会議開催年:	2006.04.18-2006.04.20

類似資料:

1 国際会議録 A study of V3+ and the vanadium acceptor level in semi-insulating 6H-SiC Lee, Wonwoo, Zvanut, Mary E. Materials Research Society	7 国際会議録 Deep Levels and Compensation in High Purity Semi-Insulating 4H-SiC W. C. Mitchel, W. D. Mitchell, H. E. Smith, W. E. Carlos, E. R. Glaser Materials Research Society
2 国際会議録 A Study of V3+/4+ Levels in Semi-Insulating 6H-SiC Using Optical Admittance and Electron Paramagnetic Resonance Spectroscopies Wonwoo Lee, Mary E. Zvanut Materials Research Society	8 国際会議録 Aluminum Acceptors in Inequivalent Sites in 4H-SiC Smith, S. R., Evwaraye, A. O., Mitchel, W. C. MRS - Materials Research Society
3 国際会議録 The OW of the Vanadium Donor and Acceptor Levels in Semi-Insulating 4H-SiC and 6H-SiC Lee, W.W., Zvanut, M.E. Trans Tech Publications	9 国際会議録 Vanadium-free Semi-insulating 4H-SiC Substrates Mitchel, W. C., Saxler, A., Perrin, R., Goldstein, J., Smith, S. R., Evwaraye, A. O., Solomon, J. S., Brady, M., … Trans Tech Publications
4 国際会議録 Deep Level Point Defects in Semi-Insulating SiC Zvanut, M.E., Lee, W.W., Wang, H., Mitchel, W.C., Mitchell, W.D. Trans Tech Publications	10 国際会議録 Deep Level near Ec - 0.55 eV in Undoped 4H-SiC Substrates Mitchel, W.C., Mitchell, W.D., Smith, S.R., Landis, G., Evwaraye, A.O., Fang, Z.Q., Look, D.C., Sizelove, J.R. Trans Tech Publications
5 国際会議録 Optically Induced Transitions among Point Defects in High Purity and Vanadium-Doped Semi-Insulating 4H SiC Zvanut, M.E., Konovalov, V.V., Mitchel, W.C., Mitchell, W.D. Trans Tech Publications	11 国際会議録 Spectroscopic Investigation of Vanadium Acceptor Level in 4H and 6H-SiC Lauer, V., Bremond, G., Souifi, A., Guillot, G., Chourou, K., Madar, R., Clerjaud, B. Trans Tech Publications
6 国際会議録 Electrical and Optical Investigation of the Position of Vanadium Related Defects in the 4H and 6H SiC Bandgaps Jenny, J. R., Skowronski, M., Mitchel, W. C., Smith, S. R., Evwaraye, A. O., Hobgood, H. M., Augustine, G., Hopkins, R. … MRS - Materials Research Society	12 国際会議録 Impurity Conduction in n-Type 4H-SiC Evwaraye, A. O., Smith, S. R., Mitchel, W. C., Roth, M. D. MRS - Materials Research Society

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