Effects of Different Defect Types on the Performance of Devices Fabricated on a 4H-SiC Homoepitaxial Layer
- 著者名:
Hui Chen Balaji Raghothamachar William Vetter Michael Dudley Y. Wang B. J. Skromme - 掲載資料名:
- Silicon carbide 2006--materials, processing and devices : symposium held April 18-20, 2006, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 911
- 発行年:
- 2006
- 開始ページ:
- 169
- 終了ページ:
- 174
- 総ページ数:
- 6
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558998674 [1558998675]
- 言語:
- 英語
- 請求記号:
- M23500/911
- 資料種別:
- 国際会議録
類似資料:
Materials Research Society | |
Trans Tech Publications |
Materials Research Society |
Materials Research Society | |
Materials Research Society |
Trans Tech Publications |
Materials Research Society |
Materials Research Society |
Materials Research Society |
Trans Tech Publications |