High Quality Uniform Thick Epitaxy of 4H-SiC for High Power Device Applications

High Quality Uniform Thick Epitaxy of 4H-SiC for High Power Device Applications

著者名:

Jie Zhang

掲載資料名:

Silicon carbide 2006--materials, processing and devices : symposium held April 18-20, 2006, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

911

発行年:

2006

開始ページ:

107

終了ページ:

112

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998674 [1558998675]

言語:

英語

請求記号:

M23500/911

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046615
シリーズID:	PA00000011
会議名:	MRS Spring Meeting : Symposium B
回次:	2006
会議開催地:	San Francisco, California, USA
会議開催年:	2006.04.18-2006.04.20

類似資料:

1 国際会議録 High Quality Uniform SiC Epitaxy for Power Device Applications J. Zhang, E. Romano, J. Mazzola, S.G. Sunkari, C. Hoff, I. Sankin, M.S. Mazzola Trans Tech Publications	7 国際会議録 Effect of High-Dose Aluminium Implantation on 4H-SiC Oxidation Cheng, L., Casady, J.R.B., Mazzola, J., Casady, J.B., Koshka, Y., Bondarenko, V. Trans Tech Publications
2 国際会議録 Highly Uniform SiC Epitaxy for MESFET Fabrication Zhang, J., Mazzola, J., Hoff, C., Rivas, C., Romano, E., Casady, J.R.B., Mazzola, M.S., Casady, J.B., Matocha, K.S. Trans Tech Publications	8 国際会議録 High Uniformity with Reduced Surface Roughness of Chloride Based CVD Process on 100mm 4° Off-Axis 4H-SiC H. Das, S.G. Sunkari, T. Oldham, J.R.B. Casady, J.B. Casady Trans Tech Publications
3 国際会議録 Epitaxial Growth on 2° Off-axis 4H SiC Substrates with Addition of HCl Jie Zhang, Swapna Sunkari, Janice Mazzola, Becky Tyrrell, Gray Stewart, R. Stahlbush, J. Caldwell, P. Klein, Michael … Materials Research Society	9 国際会議録 Uniformity and Morphology of 10 x 100mm 4 ° Off-Axis 4H-SiC Epitaxial Layers and their Effect on Device Performance H. Das, S. Sunkari, T. Oldham, J. Rodgers, J. Casady Trans Tech Publications
4 国際会議録 High Growth Rate (up to 20 μm/h) SiC Epitaxy in a Horizontal Hot-Wall Reactor Zhang, J., Mazzola, J., Hoff, C., Koshka, Y., Casady, J. Trans Tech Publications	10 国際会議録 4H-SiC Device Scaling Development on Repaired Micropipe Substrates Schattner, T. E., Casady, J. B., Smith, M. C. D., Mazzola, M. S., Dmitriev, V., Rentakova, S. V., Saddow, S. E. Trans Tech Publications
5 国際会議録 Surface Morphology Improvement and Repeatable Doping Characterization of 4H-SiC Epitaxy Grown on 4° Off-Axis 4H-SiC Wafers S.G. Sunkari, H. Das, C. Hoff, Y. Koshka, J.R.B. Casady Trans Tech Publications	11 国際会議録 High Quality Epitaxial Growth on 4° Off-Axis 4H SiC with Addition of HCI J. Zhang, J. Mazzola, S.G. Sunkari, G. Stewart, P.B. Klein Trans Tech Publications
6 国際会議録 Fast Switching (41 MHz), 2.5 mΩ・cm2, High Current 4H-SiC VJFETs for High Power and High Temperature Applications Cheng, L., Casady, J.R.B., Mazzola, M.S., Bondarenko, V., Kelley, R.L., Sankin, I., Merrett, J.N., Casadv, J.B. Trans Tech Publications	12 国際会議録 Growth of Device Quality 4H-SiC High Velocity Epitaxy Yakimova, R., Syvajarvi, M., Ciechonski, R.R, Wahab, Q. Trans Tech Publications

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