Silicon Carbide Growth: C/Si Ratio Evaluation and Modeling

Silicon Carbide Growth: C/Si Ratio Evaluation and Modeling

著者名:

Michel Pons

掲載資料名:

Silicon carbide 2006--materials, processing and devices : symposium held April 18-20, 2006, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

911

発行年:

2006

開始ページ:

67

終了ページ:

78

総ページ数:

12

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998674 [1558998675]

言語:

英語

請求記号:

M23500/911

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046615
シリーズID:	PA00000011
会議名:	MRS Spring Meeting : Symposium B
回次:	2006
会議開催地:	San Francisco, California, USA
会議開催年:	2006.04.18-2006.04.20

類似資料:

1 国際会議録 Silicon Carbide Growth:C/Si Ratio Evaluation and Modeling M. Pons, S. Nishizawa, P.J. Wellmann, E. Blanquet, D. Chaussende Trans Tech Publications	7 国際会議録 Assessment of SiC Crystal Chemistry during the PVT Growth Process: Coupled Numerical Modeling and Thermodynamics Approach K. Ariyawong, C. Chatillon, E. Blanquet, J.M. Dedulle, D. Chaussende Trans Tech Publications
2 国際会議録 Epitaxial Silicon Carbide Simulations vs. Experiments: Etching, Growth Rates and Aluminum/Nitrogen Doping Meziere, Jerome, Blanquet, Elisabeth, Pons, Michel, Dedulle, Jean-Marc, Ferret, Pierre, Cioccio, Lea Di, Billon, Thierry Materials Research Society	8 国際会議録 Coupled Thermodynamic - Mass Transfer Modeling of the SiC Boule Growth by the PVT Method Pisch, A., Blanquet, E., Pons, M., Bernard, C., Dedulle, J.-M., Madar, R. Trans Tech Publications
3 国際会議録 Heat and Mass Transfer Modeling for a Better Knowledge of the Large-Area Growth of Homoepitaxial SiC by CVD Pons, Michel, Meziere, Jerome, Dedulle, Jean Marc, Kuan, Stephane Wan Tang, Blanquet, Elisabeth, Bernard, Claude, … Materials Research Society	9 国際会議録 Influence of the N/AI Ratio in the Gas Phase on the Growth of AIN by High Temperature Chemical Vapor Deposition (HTCVD) A. Claudel, E. Blanquet, D. Chaussende, D. Pique, M. Pons Trans Tech Publications
4 国際会議録 Defect Formation and Macroscopic Modelling of Silicon Carbide Sublimation Process Pons, M., Blanquet, E., Bernard, C., Dedulle, J.M., Anikin, M., Chourou, K., Madar, R. Electrochemical Society	10 国際会議録 Gas Fed Top-Seeded Solution Growth of Silicon Carbide Chaussende, D., Pons, M., Madar, R. Trans Tech Publications
5 国際会議録 Progress and Limits of the Numerical Simulation of SiC Bulk and Epitaxy Growth Processes Pons, M., Blanquet, E., Dedulle, J. M., Ucar, M., Wellmann, P., Danielsson, O., Ferret, P., Cioccio, L. Di, Baillet, F., … Trans Tech Publications	11 国際会議録 Comparison of Thermodynamic Databases for the Modeling of SiC Growth by PVT K. Ariyawong, E. Blanquet, J.M. Dedulle, T. Ouisse, D. Chaussende Trans Tech Publications
6 国際会議録 Heat and Mass Transfer Simulation of SiC Boule Growth by Sublimation Pons, Michel, Moulin, Cecile, Debulle, Jean-Marc, Pisch, Alexndre, Pelossier, Bernard, Blanquet, Elisabeth, Anikin, … Materials Research Society	12 国際会議録 Numerical simulation of SiC processes: A characterization tool for the design of epitaxial structures in electronics Pans, M., Nishizawa, S., Wettmann, P., Ucar, M., Blanquet, E., Dedulle, J. M., Baillet, F., Chaussende, D., Bernard, C., … Electrochemical Society

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