Investigation of Dislocation Behavior During Bulk Crystal Growth of SiC
- 著者名:
Noboru Ohtani Masakazu Katsuno Masashi Nakabayashi Hiroshi Tsuge Tatsuo Fujimoto Hirokatsu Yashiro Mitsuru Sawamura Takashi Aigo Taizo Hoshino - 掲載資料名:
- Silicon carbide 2006--materials, processing and devices : symposium held April 18-20, 2006, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 911
- 発行年:
- 2006
- 開始ページ:
- 3
- 終了ページ:
- 10
- 総ページ数:
- 8
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558998674 [1558998675]
- 言語:
- 英語
- 請求記号:
- M23500/911
- 資料種別:
- 国際会議録
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11
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Growth and Characterization of SiC Bulk Crystals Grown on an Off-Oriented (11-20) Seed Crystal
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