Grain Nucleation and Grain Growth During Crystallization of HWCVD a-Si:H Films

Grain Nucleation and Grain Growth During Crystallization of HWCVD a-Si:H Films

著者名:

掲載資料名:

Amorphous and polycrystalline thin-film silicon science and technology--2006 : symposium held April 18-21, 2006, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

910

発行年:

2007

開始ページ:

175

終了ページ:

180

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998667 [1558998667]

言語:

英語

請求記号:

M23500/910

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046614
シリーズID:	PA00000011
会議名:	MRS Spring Meeting : Symposium A
回次:	2006
会議開催地:	San Francisco, California, USA
会議開催年:	2006.04.18-2006.04.21

類似資料:

1 国際会議録 The Influence Of W Filament Alloying On The Electronic Properties Of HWCVD Deposited a-Si:H Films Gallagher, A. C., Mahan, A. H., Mason, A., Nelson, B. P. Materials Research Society	7 国際会議録 Structural Changes in a-Si:H Films Deposited on the Edge of Crystallinity Guha, S., Mahan, A. H., Williamson, D. L., Yang, J. Materials Research Society
2 国際会議録 Films and Devices Deposited by HWCVD at Ultra High Deposition Rates Mahan, A.H., Xu, Y., Iwaniczko, E., Williamson, D.L., Beyer, W., Perkins, J.D., Vanecek, M., Gedvilas, L.M., Nelson, … Materials Research Society	8 国際会議録 Improvement of Grain Growth and Surface Roughness in Laser-Crystallized Polycrystalline Silicon Films Choi, H-S., Park, C-M., Jeon, J-H., Min, B-H., Han, M-K. MRS - Materials Research Society
3 国際会議録 Deposition of Device Quality μc-Si Films and Solar Cells at High Rates by HWCVD in a W Filament Regime Where W/Si Formation is Minimal Iwaniczko, E., Mahan, A. H., Yan, B., Gedvilas, L. N., Williamson, D. L., Nelson, B. P. Materials Research Society	9 国際会議録 Assessment of Intrinsic-Layer Growth Temperature to High-Deposition-Rate a-Si:H n-i-p Solar Cells Deposited to Hot-Wire CVD Iwaniczko, E., Mahan, A. H., Nelson, B. P., Wang, Q., Xu, Y. Materials Research Society
4 国際会議録 Deposition of Device Quality μc-Si Films and Solar Cells at High Rates by HWCVD in a W Filament Regime Where W/Si Formation is Minimal Iwaniczko, E., Mahan, A. H., Yan, B., Gedvilas, L. N., Williamson, D. L., Nelson, B. P. Materials Research Society	10 国際会議録 Small-Angle Neutron Scattering From Device-Quality a-Si:H And a-Si:D Prepared By PECVD And HWCVD Guha, S., Iwaniczko, E., Marr, D. W. M., Nelson, B. P., Williamson, D. L., Yan, B., Yang, J. Materials Research Society
5 国際会議録 Growth of Hydrogenated Microcrystalline Silicon (μc-Si:H) Films by HWCVD Using a Graphite Catalyzer Bhusari, D.M., Kumar, P., Kupich, M., Schroeder, B. Materials Research Society	11 国際会議録 Deposition of Optimal a-Si:H and a-SiGe:H by HWCVD Using the Same Filament Temperature and Substrate Temperature Mahan, A.H., Xu, Y., Gedvilas, L.M. Materials Research Society
6 国際会議録 MICROVOIDS AND PHOTOCONDUCTIVITY IN a-SiC:H AND a-Si:H Mahan, A. H., Williamson, D. L., Nelson, B. P. Materials Research Society	12 国際会議録 Nucleation and growth rates in isothermal crystallization of amorphous Si50Ge50 films Song, J. H., Im, James S. MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12