High Temperature Applications Of 4H-SiC Vertical Junction Field-Effect Transistors And Schottky Diodes

High Temperature Applications Of 4H-SiC Vertical Junction Field-Effect Transistors And Schottky Diodes

著者名:

P. Bhatnagar

掲載資料名:

Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006

シリーズ名:

Materials science forum

シリーズ巻号:

556-557

発行年:

2007

開始ページ:

987

終了ページ:

990

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494422 [0878494421]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046610
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	6th
会議開催地:	Newcastle upon Tyne, UK
会議開催年:	2006.09.00

類似資料:

1 国際会議録 High Temperature Characterisation of 4H-SiC VJFET P. Bhatnagar, N.G. Wright, A. Horsfall, K.V. Vassilevski, C.M. Johnson, M.J. Uren, K.P. Hilton, A.G. Munday, A.J. Hydes Trans Tech Publications	7 国際会議録 4H-SiC Schottky Diodes with High On/Off Current Ratio Vassilevski, K.V., Horsfall, A.B., Johnson, C.M., Wright, N.G., O'Neill, A.G. Trans Tech Publications
2 国際会議録 High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension K. Vassilevski, I. Nikitina, A. Horsfall, N.G. Wright, A.G. O'Neill, K.P. Hilton, A.G. Munday, A.J. Hydes, M.J. Uren, … Trans Tech Publications	8 国際会議録 Analytical Modelling of I-V Characteristics for 4H-SiC Enhancement Mode VJFET Bhatnagar, P., Horsfall, A.B., Wright, N.G., Johnson, C.M., Vassilevski, K.V., O'Neill, A.G. Trans Tech Publications
3 国際会議録 Higll Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche Breakdown Vassilevski, K.V., Nikitina, I.P., Bhatnagar, P., Horsfall, A.B., Wright, N.G., O'Neill, A.G., Uren, M.J., Hilton, K., … Trans Tech Publications	9 国際会議録 Optimisation of Implanted Guard-Ring Terminations in 4H-SiC Schottky Diodes Horsfall, A.B., Vassilevski, K.V., Johnson, C.M., Wright, N.G., O'Neill, A.G., Gwilliam, R.M. Trans Tech Publications
4 国際会議録 Silicon Carbide Vertical JFET Operating at High Temperature K. Vassilevski, K.P. Hilton, N.G. Wright, M.J. Uren, A.G. Munday Trans Tech Publications	10 国際会議録 Optimisation of Implanted Guard-Ring Terminations in 4H-SiC Schottky Diodes Horsfall, A.B., Vassilevski, K.V., Johnson, C.M., Wright, N.G., O'Neill, A.G., Gwilliam, R.M. Trans Tech Publications
5 国際会議録 Characterisation of the High Temperature Performance of 4H-SiC Schottky Barrier Diodes Blasciuc-Dimitriu, C., Horsfall, A.B., Vassilevski, K.V., Johnson, C.M., Wright, N.G., O'Neill, A.G. Trans Tech Publications	11 国際会議録 4.6 kV, 10.5 mOhm&×cm² Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial Wafers K. Vassilevski, I.P. Nikitina, A.B. Horsfall, N.G. Wright, C.M. Johnson Trans Tech Publications
6 国際会議録 4H-SiC Schottky Diodes with High On/Off Current Ratio Vassilevski, K.V., Horsfall, A.B., Johnson, C.M., Wright, N.G., O'Neill, A.G. Trans Tech Publications	12 国際会議録 3.3 kV Rated Silicon Carbide Schottky Diodes with Epitaxial Field Stop Ring K. Vasilevskiy, I.P. Nikitina, A.B. Horsfall, N.G. Wright, C.M. Johnson Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12