Potential Benefits of Silicon Carbide Zener Diodes Used as Components of Intrinsically Safe Barriers

Potential Benefits of Silicon Carbide Zener Diodes Used as Components of Intrinsically Safe Barriers

著者名:

P. Lark

掲載資料名:

Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006

シリーズ名:

Materials science forum

シリーズ巻号:

556-557

発行年:

2007

開始ページ:

937

終了ページ:

940

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494422 [0878494421]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046610
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	6th
会議開催地:	Newcastle upon Tyne, UK
会議開催年:	2006.09.00

類似資料:

1 国際会議録 Thermal Stress Response of Silicon Carbide pin Diodes Used as Photovoltaic Devices S. Barker, K.V. Vassilevski, I.P. Nikitina, N.G. Wright, A.B. Horsfall Trans Tech Publications	7 国際会議録 Growth of Few Layers Graphene on Silicon Carbide from Nickel Silicide Supersaturated with Carbon K. Vassilevski, I.P. Nikitina, A.B. Horsfall, N.G. Wright, C.M. Johnson Trans Tech Publications
2 国際会議録 Higll Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche Breakdown Vassilevski, K.V., Nikitina, I.P., Bhatnagar, P., Horsfall, A.B., Wright, N.G., O'Neill, A.G., Uren, M.J., Hilton, K., … Trans Tech Publications	8 国際会議録 Structural Properties of Titanium-Nickel Films on Silicon Carbide Following High Temperature Annealing Vassilevski, K.V., Nikitina, I.P., Horsfall, A.B., Wright, N.G., Johnson, C.M., Malhan, R.K., Yamamoto, T. Trans Tech Publications
3 国際会議録 Silicon Carbide Static Induction Transistor with Implanted Buried Gate K.V. Vassilevski, I.P. Nikitina, A.B. Horsfall, N.G. Wright, A.G. O'Neill Trans Tech Publications	9 国際会議録 Reactive Ion Etching of Silicon Carbide with Patterned Boron Implantation Vassilevski, K.V., Hedley, J., Horsfall, A.B., Johnson, C.M., Wright, N.G. Trans Tech Publications
4 国際会議録 Silicon Carbide Vertical JFET with Self-Aligned Nickel Silicide Contacts K. Vassilevski, I.P. Nikitina, A.B. Horsfall, N.G. Wright, A.J. Smith Trans Tech Publications	10 国際会議録 High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension K. Vassilevski, I. Nikitina, A. Horsfall, N.G. Wright, A.G. O'Neill, K.P. Hilton, A.G. Munday, A.J. Hydes, M.J. Uren, … Trans Tech Publications
5 国際会議録 Low Voltage Silicon Carbide Zener Diode Vassilevski, K.V., Zekentes, K., Horsfall, A.B., Johnson, C.M., Wright, N.G. Trans Tech Publications	11 国際会議録 3.3 kV Rated Silicon Carbide Schottky Diodes with Epitaxial Field Stop Ring K. Vasilevskiy, I.P. Nikitina, A.B. Horsfall, N.G. Wright, C.M. Johnson Trans Tech Publications
6 国際会議録 Silicon Carbide UV Based Photovoltaic for Hostile Environments S. Barker, R.C. Stevens, K.V. Vassilevski, I.P. Nikitina, N.G. Wright Trans Tech Publications	12 国際会議録 Enhanced Dopant Diffusion Effects in 4H Silicon Carbide Phelps, G.J., Wright, N.G., Chester, E.G., Johnson, C.M., O'Neill, A.G., Ortolland, S., Horsfall, A.B., Vassilevski, K., … Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12