Improvement of Electrical Characteristics of Ion Implanted 4H-SiC MESFET on a Semi-Insulating Substrate

Improvement of Electrical Characteristics of Ion Implanted 4H-SiC MESFET on a Semi-Insulating Substrate

著者名:

掲載資料名:

Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006

シリーズ名:

Materials science forum

シリーズ巻号:

556-557

発行年:

2007

開始ページ:

803

終了ページ:

806

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494422 [0878494421]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046610
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	6th
会議開催地:	Newcastle upon Tyne, UK
会議開催年:	2006.09.00

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1 国際会議録 RF Characteristics of a Fully Ion-Implanted MESFET on a Bulk Semi-Insulating 4H-SiC Substrate Ogata, M., Katakami, S., Ono, S., Arai, M. Trans Tech Publications	7 国際会議録 Characteristics of MESFETs Made by Ion-Implantation in Bulk Semi-Insulating 4H-SiC Mitra, S., Tucker, J.B., Rao, M.V., Papanicolaou, N., Jones, K.A. Trans Tech Publications
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