X-Ray and AFM Analysis of Al2O3 Deposited by ALCVD on n-Type 4H-SiC

X-Ray and AFM Analysis of Al2O3 Deposited by ALCVD on n-Type 4H-SiC

著者名:

U. Grossner

掲載資料名:

Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006

シリーズ名:

Materials science forum

シリーズ巻号:

556-557

発行年:

2007

開始ページ:

683

終了ページ:

686

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494422 [0878494421]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046610
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	6th
会議開催地:	Newcastle upon Tyne, UK
会議開催年:	2006.09.00

類似資料:

1 国際会議録 High Temperature Annealing Study of Al2O3 Deposited by ALCVD on n-Type 4H-SiC Avice, M., Grossner, U., Nilsen, O., Christensen, J.S., Fjellvag, H., Svensson, B.G. Trans Tech Publications	7 国際会議録 Formation and Annihilation of Carbon Vacancies in 4H-SiC H.M. Ayedh, V. Bobal, R. Nipoti, A. Hallén, B.G. Svensson Trans Tech Publications
2 国際会議録 The Al2O3/4H-SiC Interface Investigated by Thermal Dielectric Relaxation Current Technique M. Avice, U. Grossner, O. Nilsen, H. Fjellvag, B.G. Svensson Trans Tech Publications	8 国際会議録 DLTS Study on Al+ Ion Implanted and 1950°C Annealed p-i-n 4H-SiC Vertical Diodes H.M. Ayedh, M. Puzzanghera, B.G. Svensson, R. Nipoti Trans Tech Publications
3 国際会議録 Electrical Properties of Aluminum Oxide Films Grown by Atomic Layer Deposition on n-Type 4H-SiC Avice, M., Grossner, U., Monakhov, E. V., Grillenberger, J., Nilsen, O., Fjellvag, H., Svensson, B. G. Trans Tech Publications	9 国際会議録 Controlling the Carbon Vacancy Concentration in 4H-SiC Subjected to High Temperature Treatment H.M. Ayedh, R. Nipoti, A. Hallén, B.G. Svensson Trans Tech Publications
4 国際会議録 Electrical Properties and Gas Sensing Characteristics of the Al₂O₃/4H SiC Interface Studied by Impedance Spectroscopy P.A. Sobas, O. Nilsen, H. Fjellvåg, B.G. Svensson Trans Tech Publications	10 国際会議録 Carrier Removal in Electron Irradiated 4H and 6H SiC M. Mikelsen, U. Grossner, J.H. Bleka, E.V. Monakhov, B.G. Svensson Trans Tech Publications
5 国際会議録 Formation of D-Center in p-Type 4H-SiC Epi-Layers during High Temperature Treatments H.M. Ayedh, N. Iwamoto, R. Nipoti, A. Hallén, B.G. Svensson Trans Tech Publications	11 国際会議録 Influence of Annealing on the Al₂O₃/4H-SiC Interface U. Grossner, M. Avice, S. Diplas, A. Thøgersen, J.S. Christensen Trans Tech Publications
6 国際会議録 XPS Study of the Electronic Properties of the Ce/4H-SiC Interface, and the Formation of the SiO2/Ce2Si2O7/4H-SiC Interface Structure upon Oxidation M. Kildemo, U. Grossner, B.G. Svensson, S. Raaen Trans Tech Publications	12 国際会議録 Influence of Growth Conditions on Irradiation Induced Defects in 4H-SiC I. Pintilie, K. Irmscher, U. Grossner, B.G. Svensson, B. Thomas Trans Tech Publications

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