Electrical Properties of Metal-Oxide-Semiconductor (MOS) Structures on 4H-SiC(0001) Formed by Oxidizing Pre-Deposited SixNy

Electrical Properties of Metal-Oxide-Semiconductor (MOS) Structures on 4H-SiC(0001) Formed by Oxidizing Pre-Deposited SixNy

著者名:

J.H. Moon

掲載資料名:

Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006

シリーズ名:

Materials science forum

シリーズ巻号:

556-557

発行年:

2007

開始ページ:

647

終了ページ:

650

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494422 [0878494421]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046610
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	6th
会議開催地:	Newcastle upon Tyne, UK
会議開催年:	2006.09.00

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2 国際会議録 Improved 4H-SiC MOS Interface Produced by Oxidized-SiN Gate Oxide J.H. Moon, J.H. Yim, H.S. Seo, C.H. Kim, D.H. Lee Trans Tech Publications	8 国際会議録 Fabrication and Characterization of 4H-SiC pn Diode with Field Limiting Ring Bahng, W., Song, G.H., Kim, H.W., Seo, K.S., Kim, N.K. Trans Tech Publications
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