Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose

Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose

著者名:

A. Poggi

掲載資料名:

Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006

シリーズ名:

Materials science forum

シリーズ巻号:

556-557

発行年:

2007

開始ページ:

639

終了ページ:

642

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494422 [0878494421]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046610
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	6th
会議開催地:	Newcastle upon Tyne, UK
会議開催年:	2006.09.00

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2 国際会議録 Effects of N Implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET A. Poggi, F. Moscatelli, S. Solmi, R. Nipoti, F. Tamarri Trans Tech Publications	8 国際会議録 Non-Nitridated Oxides: Abnormal Behaviour of N-4H-SiC/SiO₂ Capacitors at Low Temperature Caused by near Interface States I. Pintilie, F. Moscatelli, R. Nipoti, A. Poggi, S. Solmi Trans Tech Publications
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4 国際会議録 Analysis of the Electron Traps at the 4H-SiC/SiO₂ Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen Pre-Implanted Layer I. Pintilie, F. Moscatelli, R. Nipoti, A. Poggi, S. Solmi Trans Tech Publications	10 国際会議録 Interracial Properties of SiO2 Grown on 4H-SiC: Comparison between N2O and Wet O2 Oxidation Ambient Poggi, A., Moscatelli, F., Scorzoni, A., Marino, G., Nipoti, R., Sanmartin, M. Trans Tech Publications
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