Dynamical Simulation of SiO2/4H-SiC(0001) Interface Oxidation Process: from First-Principles

Dynamical Simulation of SiO2/4H-SiC(0001) Interface Oxidation Process: from First-Principles

著者名:

掲載資料名:

Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006

シリーズ名:

Materials science forum

シリーズ巻号:

556-557

発行年:

2007

開始ページ:

615

終了ページ:

620

総ページ数:

6

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494422 [0878494421]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046610
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	6th
会議開催地:	Newcastle upon Tyne, UK
会議開催年:	2006.09.00

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2 国際会議録 Dynamical Simulations of Dry Oxidation and NO Annealing of SiO₂/4H-SiC Interface on C-Face at 1500K: From First Principles T. Ohnuma, A. Miyashita, M. Yoshikawa, H. Tsuchida Trans Tech Publications	8 国際会議録 Ultrahigh-Temperature Oxidation of 4H-SiC(0001) and an Impact of Cooling Process on SiO2/SiC Interface Properties T. Hosoi, D. Nagai, M. Sometani, T. Shimura, M. Takei, H. Watanabe Trans Tech Publications
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