Blank Cover Image

Post-Implantation Annealing of SiC: Relevance of the Heating Rate

著者名:
R. Nipoti  
掲載資料名:
Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006
シリーズ名:
Materials science forum
シリーズ巻号:
556-557
発行年:
2007
開始ページ:
561
終了ページ:
566
総ページ数:
6
出版情報:
Stafa-Zuerich: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878494422 [0878494421]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

類似資料:

1 国際会議録 Ion Implanted p+/n 4H-SiC Junctions: Effect of the Heating Rate During Post Implantation Annealing

Roberta Nipoti, Alberto Carnera, Fabio Bergamini, Mariaconcetta Canino, Antonella Poggi, Sandro Solmi, Mara Passini

Materials Research Society
7 国際会議録 Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process

M. Canino, F. Giannazzo, F. Roccaforte, A. Poggi, S. Solmi, V. Raineri, R. Nipoti

Trans Tech Publications
2 国際会議録 Al+ Implanted 4H-SiC p+-i-n Diodes: Evidence for Post-Implantation-Annealing Dependent Defect Activation

U. Grossner, F. Moscatelli, R. Nipoti

Trans Tech Publications
8 国際会議録 Influence of Heating and Cooling Rates of Post-Implantation Annealing Process on Al-Implanted 4H-SiC Epitaxial Samples

L. Ottaviani, S. Biondo, S. Morata, O. Palais, T. Sauvage

Trans Tech Publications
3 国際会議録 Comparison between Chemical and Electrical Profiles in Al+ or N+ Implanted and Annealed 6H-SiC

Nipoti, R., Carnera, A., Raineri, V.

Trans Tech Publications
9 国際会議録 Structural,Optical and Chemical Characterization of 300℃,MeV Ion Implanted and 1700℃Annealed 6H-SiC

Nipoti, R., Carnera, A., Mattei, G.

Materials Research Society
4 国際会議録 Comparison between Chemical and Electrical Profiles in Al+ or N+ Implanted and Annealed 6H-SiC

Nipoti, R., Carnera, A., Raineri, V.

Trans Tech Publications
10 国際会議録 High Dose Al+ Implanted and Microwave Annealed 4H-SiC

R. Nipoti, A. Nath, M.V. Rao, A. Hallén, F. Mancarella

Trans Tech Publications
5 国際会議録 Current Analysis of Ion Implanted p+/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient

Nipoti, R., Bergamini, F., Moscatelli, F., Poggi, A., Canino, M., Bertuccio, G.

Trans Tech Publications
11 国際会議録 A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects

Lazar, M., Raynaud, C., Planson, D., Locatelli, M.-L., Isoird, K., Ottaviani, L., Chante, J.P., Nipoti, R., Poggi, A., …

Trans Tech Publications
6 国際会議録 SiC Donor Doping by 300°C P Implantation: Characterization of the Doped Layer Properties in Dependence of the Post-Implantation Annealing Temperature

Poggi, A., Nipoti, R., Moscatelli, F., Cardinali, G.C., Canino, M.

Trans Tech Publications
12 国際会議録 A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects

Lazar, M., Raynaud, C., Planson, D., Locatelli, M.-L., Isoird, K., Ottaviani, L., Chante, J.P., Nipoti, R., Poggi, A., …

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12