Control of the Flatband Voltage of 4H-SiC Metal-Oxide Semiconductor (MOS) Capacitors by Co-Implantation of Nitrogen and Aluminum

Control of the Flatband Voltage of 4H-SiC Metal-Oxide Semiconductor (MOS) Capacitors by Co-Implantation of Nitrogen and Aluminum

著者名:

掲載資料名:

Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006

シリーズ名:

Materials science forum

シリーズ巻号:

556-557

発行年:

2007

開始ページ:

555

終了ページ:

560

総ページ数:

6

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494422 [0878494421]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046610
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	6th
会議開催地:	Newcastle upon Tyne, UK
会議開催年:	2006.09.00

類似資料:

1 国際会議録 Low Density of Interface States in n-Type 4H-SiC MOS Capacitors Achieved by Nitrogen Implantation Ciobanu, F., Pensl, G., Afanas'ev, V., Schoner, A. Trans Tech Publications	7 国際会議録 Kick-Out Phenomena in Epitaxially Boron- and Aluminum-Doped 4H-SiC during Implantation and Annealing Processes Negoro, Y., Kimoto, T., Matsunami, H., Pensl, G. Trans Tech Publications
2 国際会議録 Nitrogen Implantation - An Alternative Technique to Reduce Traps at SiC/SiO2-Interfaces Ciobanu, F., Frank, T., Pensl, G., Afanas'ev, V., Shamuilia, S., Schoner, A., Kimoto, T. Trans Tech Publications	8 国際会議録 Physics of SiC Processing Pensl, G., Afanas'ev, V. V., Bassler, M., Frank, T., Laube, M., Weidner, M. Trans Tech Publications
3 国際会議録 4H-SiC Metal-Oxide-Semiconductor (MOS) Capacitors Fabricated by Oxidation in a Tungsten Lamp Furnace in Combination with a Microwave Plasma and Subsequent … S. Beljakowa, T. Frank, G. Pensl, K.Y. Gao, F. Speck, T. Seyller Trans Tech Publications	9 国際会議録 Electrically Active Traps at the 4H-SiC/SiO2 Interface Responsible for the Limitation of the Channel Mobility Bassler, M., Afanas'ev, V. V., Pensl, G., Schulz, M. Trans Tech Publications
4 国際会議録 Two Different Species of Traps Monitored at N-Implanted 3C-SiC MOS Capacitors by Conductance Spectroscopy S. Beljakowa, M. Krieger, T. Frank, G. Pensl, L. Trapaidze Trans Tech Publications	10 国際会議録 SiC/SiO2 Interface States: Properties and Models Afanas'ev, V. V., Ciobanu, F., Dimitrijev, S., Pensl, G., Stesmans, A. Trans Tech Publications
5 国際会議録 Interface State Density at Implanted 6H SiC/SiO2 MOS Structures Bassler,M., Afanas'ev,V.V., Pensl,G. Trans Tech Publications	11 国際会議録 Detection and Electrical Characterization of Defects at the SiO₂/4H-SiC Interface M. Krieger, S. Beljakowa, B. Zippelius, V.V. Afanas'ev, A.J. Bauer Trans Tech Publications
6 国際会議録 Traps at the Interface of 3C-SiC/SiO2-MOS-Structures Ciobanu, F., Pensl, G., Nagasawa, H., Schoner, A., Dimitrijev, S., Cheong, K.-Y., Afanas'ev, V.V., Wagner, G. Trans Tech Publications	12 国際会議録 Electronic Properties of SiON/HfO2 Insulating Stacks on 4H-SiC (0001) Afanas'ev, V.V., Campbell, S.A., Cheong, K.Y., Ciobanu, F., Dimitrijev, S., Pensl, G., Stesmans, A., Zhong, L. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12