Formation of Deep Traps at the 4H-SiC/SiO2 Interface when Utilizing Sodium Enhanced Oxidation

Formation of Deep Traps at the 4H-SiC/SiO2 Interface when Utilizing Sodium Enhanced Oxidation

著者名:

掲載資料名:

Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006

シリーズ名:

Materials science forum

シリーズ巻号:

556-557

発行年:

2007

開始ページ:

517

終了ページ:

520

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494422 [0878494421]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046610
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	6th
会議開催地:	Newcastle upon Tyne, UK
会議開催年:	2006.09.00

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6 国際会議録 High Frequency 4H-SiC MOSFETs G. Gudjonsson, F. Allerstam, P.A. Nilsson, H. Hjelmgren, E.O. Sveinbjornsson, H. Zirath, T. Rodle, R. Jos Trans Tech Publications	12 国際会議録 On Shallow Interface States in n-Type 4H-SiC Metal-Oxide-Semiconductor Structures Olafsson, H.OE., Allerstam, F., Sveinbjornsson, E.OE. Trans Tech Publications

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