SIMS Investigation of Ge Incorporation in 3C-SiC Layers Grown from Ge-Si Melts
- 著者名:
H. Peyre N. Habka V. Souliere M. Soueidan G. Ferro Y. Monteil J. Camassel - 掲載資料名:
- Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 556-557
- 発行年:
- 2007
- 開始ページ:
- 477
- 終了ページ:
- 480
- 総ページ数:
- 4
- 出版情報:
- Stafa-Zuerich: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878494422 [0878494421]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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Evaluation of p-Type Doping for (1120) Epitaxial Layers Grown on α-Cut (1120) 4H-SiC Substrates
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