A Study of the DII Defect after Electron Irradiation and Annealing of 4H SiC

A Study of the DII Defect after Electron Irradiation and Annealing of 4H SiC

著者名:

掲載資料名:

Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006

シリーズ名:

Materials science forum

シリーズ巻号:

556-557

発行年:

2007

開始ページ:

319

終了ページ:

322

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494422 [0878494421]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046610
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	6th
会議開催地:	Newcastle upon Tyne, UK
会議開催年:	2006.09.00

類似資料:

1 国際会議録 The Formation of Alphabet Lines in 4H SiC after Low-Energy Electron Irradiation J.W. Steeds Trans Tech Publications	7 国際会議録 Examination of Two P-Type 4H SiC Samples Having Similar Resistivity but Very Different Radiation Damage and Annealing Characteristics J.W. Steeds Trans Tech Publications
2 国際会議録 The Formation and Annealing of Carbon Interstitial-Related Complexes in Electron-, Proton- and Helium Irradiated 4H SiC J.W. Steeds Trans Tech Publications	8 国際会議録 Low Temperature Annealing of Optical Centres in 4H SiC Steeds, J.W., Furkert, S., Hayes, J.M., Sullivan, W. Trans Tech Publications
3 国際会議録 A Combined Photoluminescence aha Electron Paramagnetic Resonance Study of Low Energy Electron Irradiated 4H SiC Sullivan, W., Steeds, J.W., von Bardeleben, H.J., Cantin, J.L. Trans Tech Publications	9 国際会議録 Long Distance Point Defect Migration in Irradiated SiC Observed by Deep Level Transient Spectroscopy Alfieri, G., Grossner, U., Monakhov, E.V., Svensson, B.G., Steeds, J.W., Sullivan, W. Trans Tech Publications
4 国際会議録 Photoluminescence Investigation of Defects Created by Electron Bombardment of 4H-SiC J.W. Steeds Trans Tech Publications	10 国際会議録 Optical Centres with Local Vibrational Modes Created by High Temperature Annealing of Electron Irradiated 4H and 6H Silicon Carbide Steeds, J. W., Furkert, S. A., Sullivan, W., Hayes, J. M., Wright, N. G. Trans Tech Publications
5 国際会議録 Electron Irradiation of 4H SiC by TEM: An Optical Study Sridhara, S.G., Persson, P.O.Å., Carlsson, F.H.C., Bergman, J.P., Janzen, E., Evans, G., Steeds, J.W. Materials Research Society	11 国際会議録 Origin of the Up-Conversion Process in 4H SiC Steeds, J.W., Furkert, S.A., Sullivan, W., Wagner, G. Trans Tech Publications
6 国際会議録 Investigation of the Displacement Threshold of Si in 4H SiC Sullivan, W., Steeds, J.W. Trans Tech Publications	12 国際会議録 CHARACTERIEATION OF DEFECTS IN SILICON BY TRANSMISSION ELECTRON MICROSCOPY AFTER CMOS AND BIPOLAR PROCESSING Steed,J.W., Johnson,F., Simpson, M.B., Augustus, P.D. Materials Research Society

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